2001
DOI: 10.1016/s0955-2219(00)00264-8
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Processing and electrical properties of NASICON prepared from yttria-doped zirconia precursors

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Cited by 56 publications
(62 citation statements)
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“…A detailed description of the processing and characterisation of the structure, microstructure, stability and electrical properties of this compound has been reported elsewhere [9][10][11].…”
Section: Methodsmentioning
confidence: 99%
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“…A detailed description of the processing and characterisation of the structure, microstructure, stability and electrical properties of this compound has been reported elsewhere [9][10][11].…”
Section: Methodsmentioning
confidence: 99%
“…The formation of NASICON is expected to start in the range 1000-1100°C and is strongly enhanced at higher temperatures (1200-1300°C). Significant fractions of Na and P may be lost by volatilisation [9] at temperatures above 1300ºC, and the structure tends to release the Zr 4+ cations that precipitate as the oxide. Thus, the formation of crystalline NASICON occurs in a relatively narrow temperature range and should be strongly influenced by the slow kinetics.…”
Section: X-ray Diffractionmentioning
confidence: 99%
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