Process statistics of submicron MOSFET's

Demoulin, E.; Greenfield, J.A.; Dutton, R.W.; Chatterjee, P.K.; Tasch, A.F.

doi:10.1109/iedm.1979.189532

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Effective Channel Mobility1

(8)1

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1980

1984

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Cited by 10 publications

(2 citation statements)

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“…The effects of normal (5) and lateral (8) fields in the channel region on mobility have been pointed out. The effects of the lateral field due to the curvature of the velocityfield relation near the critical field E, for saturation are accounted for by B = ( I + F~.V~~/L.E,).…”

Section: Effective Channel Mobilitymentioning

confidence: 99%

“…In scaled devices with shallow source and drain regions, the sheet resistance of the n+ silicon and the contact resistance are quite important in determining gain ( 8 ) . The feedback effects due to these resistances are described by LINEAR/TRIODE REGION Above the threshold voltage of equation (5), the drain current is calculated using the gradual channel approximation as in long channel MOSFETs, with the bulk charge term…”

Section: (8)mentioning

confidence: 99%

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