2007
DOI: 10.1117/12.712368
|View full text |Cite
|
Sign up to set email alerts
|

Process margin improvement using custom transmission EAPSM reticles

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2010
2010
2016
2016

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 0 publications
0
1
0
Order By: Relevance
“…A MoSi based Hi-T material developed by Hoya Corporation, has been used for several years now by MP Mask Technology Center LLC in the production of masks for dynamic random access memory (DRAM) 18 . This current Hi-T blank utilizes a thin layer of already existing MoSi material, known as A61A, to acquire 18% transmission, while a quartz etch step is employed to obtain the required 180 degree phase shift.…”
Section: Benefits Of the Low Stress Film Over Other Hi-t Schemesmentioning
confidence: 99%
“…A MoSi based Hi-T material developed by Hoya Corporation, has been used for several years now by MP Mask Technology Center LLC in the production of masks for dynamic random access memory (DRAM) 18 . This current Hi-T blank utilizes a thin layer of already existing MoSi material, known as A61A, to acquire 18% transmission, while a quartz etch step is employed to obtain the required 180 degree phase shift.…”
Section: Benefits Of the Low Stress Film Over Other Hi-t Schemesmentioning
confidence: 99%