Process HJ: a 30 GHz NPN and 20 GHz PNP complementary bipolar process for high linearity RF circuits

Wilson, Martin C.; Osborne, P.H.; Goody, S.B.; Green, J.; Harrington, S. J.; Cook, T.B.; Thomas, Simon; Manson, A.J.; Madni, A.M.

doi:10.1109/bipol.1998.741914

Cited by 6 publications

(7 citation statements)

References 4 publications

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“…Process HJ has been described in detail elsewhere [2]. The HJV high voltage NPN and vPNP transistors are shown schematically in cross-section in figures 1 and 2 and typical device parameters are shown in Table 1.…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

Wilson¹,

Harrington²,

Manson³

et al. 2002

32nd European Solid-State Device Research Conference

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In this paper we report a new 12volt, high performance, highly competitive silicon complementary bipolar technology. NPN and vPNP devices have been fabricated with cut-off frequencies greater than 12GHz and breakdowns not less than 12volts. Two optimization techniques are discussed that can be used to improve the cut-off frequency of the vPNP device independently of the NPN. The resulting process is considered ideally suited to the manufacture of highly linear 1GHz operational amplifiers.

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Section: Experimental Details and Resultsmentioning

confidence: 99%

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

Wilson¹,

Harrington²,

Manson³

et al. 2002

32nd European Solid-State Device Research Conference

Self Cite

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“…Many complementary bipolar technologies are reported in the literature from the late 1960s to very recently [1]- [38]. From its early inception, complementary bipolar processes have been used for realizing high performance analog circuits.…”

Section: Review Of Complementary Bipolar Technologiesmentioning

confidence: 99%

“…SOI wafers make the process simpler, i.e., no n-wells are needed for the PNP device isolation, and the device size and parasitic capacitances are reduced. The use of trenches and SOI does increase the wafer cost and hence many junction isolated processes made in bulk wafers have also been reported [17], [23], [29], [30], [32], [34], [38].…”

Section: Review Of Complementary Bipolar Technologiesmentioning

confidence: 99%

A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications

Bashir

Hebert²,

DeSantis³

et al. 2001

IEEE Trans. Electron Devices

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Abstract-Silicon complementary bipolar processes offer the possibility of realizing high-performance circuits for a variety of analog applications. This paper presents a summary of silicon complementary bipolar process technology reported in recent years. Specifically, an overview of a family of silicon complementary bipolar process technologies, called Vertically Integrated PNP (VIP™ 1 ), which have been used for the realization of high-frequency analog circuits is presented. Three process technologies, termed VIP-3, VIP-3H, and VIP-4H offer device breakdowns of 40, 85, and 170 V, respectively. These processes feature optimized vertically integrated bipolar junction transistors (PNPs) along with high performance NPN transistors with polycrystalline silicon emitters, low parasitic polycrystalline silicon resistors, and metal-insulator-polycrystalline silicon capacitors. Key issues and aspects of the processes are described. These issues include the polycrystalline silicon emitter optimization and vertical and lateral device isolation in the transistors. Circuit design examples are also described which have been implemented in these technologies.

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“…The complementary process, HJ, was developed from an earlier NPN-only technology [1] and has been described fully elsewhere [2]. In summary, HJ includes standard NPN transistors, standard vertical PNP transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an optional high value capacitor), integrated inductors, ESD protection and substrate contacts.…”

Section: Process Descriptionmentioning

confidence: 99%

New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices

et al. 1999

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A new high performance silicon complementary bipolar technology is introduced. In addition a novel process "enhancement" technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricated. We propose that the technique we have used will allow specific transistors within a circuit to be optimised, as required.

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Process HJ: a 30 GHz NPN and 20 GHz PNP complementary bipolar process for high linearity RF circuits

Cited by 6 publications

References 4 publications

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications

New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices

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