Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition

Abstract

A remote plasma enhanced chemical vapor deposition (CVD) process using GeH 4 , SiH 4 , and SnCl 4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (100) substrates, without the need for buffer layers. X-ray diffraction measurements of a representative Ge 1−x Sn x sample which is 233 nm thick, with x = 9.6% show it to be highly oriented along the [001] direction and nearly relaxed, with 0.37% compressive strain. Ellipsometry measurements provide a pseudo-dielectric function which is well fitted by a 3-layer (substrate/alloy/surface oxide) model. Cross-sectional transmissionelectron-microscope images show a highly defective interface layer, ∼ 60 nm thick, containing edge dislocations and stacking faults; above this layer, the lattice is wellordered, with a much lower density of defects. Atomic force microscopy measurements show an RMS roughness of 1.2 nm for this film.

Molecular Main Group Metal Hydrides

“…An efficient route to the branched polysilane (H 3 Si) 3 Si-SiMe 3 was reported recently, and this species represents a promising precursor to bulk silicon . Extended tetrelane hydrides containing both Si and Ge centers (e.g., the butane analogue H 3 Ge-SiH 2 –SiH 2 –GeH 3 ) have been developed for CVD, − while the deposition of bulk or nanodimensional Ge from volatile germanium hydrides remains an active field of study post-2001. − While distannane H 3 Sn-SnH 3 has been prepared, this species is too thermally unstable to be used in a reliable fashion for materials synthesis. , As a result, SnH 4 and its deuterium analogue SnD 4 are commonly employed as part of synthetic protocols to access tin-containing solid state compounds, such as ternary Si x Ge y Sn z semiconductors of controllable composition. − …”

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

“…The precursors are decomposed in a plasma via collisions between energetic electrons and gas molecules. The advantage of PECVD over thermal CVD is that the deposition of semiconductor films can be achieved at relatively low temperatures, [89,90] which is critical for complementary metal-oxidesemiconductor (CMOS) compatibility. Moreover, low temperatures enable growth at nonequilibrium conditions, which has been used to produce compound semiconductor films without phase segregation.…”

Experimental Study of the Influence of CH4 and H2 on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

“…In RPECVD systems, it is also possible to achieve excellent control of the final physical properties of the manufactured nanoarchitecture by slight adjustments of the growth parameters. 40 , 41 The use of RPECVD systems for depositing SiC thin films has been poorly explored. 42 − 45 In fact, to the best of our knowledge, to date, there is no research reporting the conformation of SiQDs embedded in SiC matrixes employing RPECVD systems.…”