Process enhancements for positive tone silylation

Calabrese, Gary S.; Bohland, John F.; Pavelchek, Edward K.; Sinta, R.; Dudley, Bruce W.; Jones, Susan K.; Freeman, Peter W.

doi:10.1016/0167-9317(93)90062-a

Cited by 8 publications

(7 citation statements)

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“…However, in the same article, opposite effects for higher PAB conditions were observed when t-butoxycarbonyl groups were used as inhibitor groups. The values of residual solvent are lower by more than an order of magnitude than those reported by Beauchemin, Ebersole, and Daraktchiev, 19 who obtained values of 2-4 wt % PGMEA in 1 m films of pure novolac at 120°C and 20 Thus, the PAB of 118°C used here was 50°C above T g . Unfortunately, the effect of physical properties as discussed by Paniez et al 22 could affect photoacid diffusion during the PEB and may be confounded with residual solvent correlations.…”

Section: B Resist Componentscontrasting

confidence: 52%

Resist application effects on chemically amplified resist response

Dentinger¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested in X-ray mask fabrication technology for 0.1 μm very large scale integrated circuits Chemically amplified negative resist films of Shipley SAL 605 at 1.0 m thickness show a statistically optimized sensitivity that is twice that observed with 0.5 m films when exposed to x rays from an electron storage ring. Because of the large ''depth of focus'' of proximity x-ray lithography, the differences between thick and thin films are due to resist chemical and physical effects and processing conditions, not to the exposure process. Using identical processing conditions, 1.0-m-thick films showed 34% larger linewidths than 0.5 m films for isolated lines from one mask with a target linewidth of 0.215 m. Gel permeation chromatography results indicated that there was no dependence of resin or crosslinker concentration on thickness of the applied film. The photogenerated acid and residual solvent were quantified prior to postexposure bake, and neither was able to explain the apparent sensitivity dependence on thickness. The work suggests that some of the differences arises in the resist application process because of the ability of the thicker film to retain small molecular weight species which facilitate the linewidth production. This implies that thinner films should show better resolution purely because of chemical and physical factors in the resist film.

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Section: B Resist Componentscontrasting

confidence: 52%

Resist application effects on chemically amplified resist response

Dentinger¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…However, concerns have been raised about the flow and pattern deformation of patterns silylated with HMDS or other monofunctional agents, since the T g of such materials is close to room temperature. 36,37 We have thus undertaken a detailed thermal study of the photoresist system after each processing step, using DSC and TMA. In the TMA method a pressure is exercised on the surface of the film with a probe, and its penetration is measured as a function of temperature.…”

Section: Thermal Characterizationmentioning

confidence: 99%

Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabrication

Gogolides

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…17,18 At the beginning of the PEB when the film is not a glass, the methanol could easily have this high a diffusion coefficient. Because there is very little methanol left within the film after PEB, an average methanol molecule created in the last few seconds of the PEB near the resist-wafer interface would need to diffuse to the top of the film and evaporate within a few seconds.…”

Section: A Chemical Modification Of Resistmentioning

confidence: 99%

Quantification of the extent of reaction in a negative, novolac-based, chemically amplified resist

Dentinger

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inHigh sensitivity nonchemically amplified molecular resists based on photosensitive dissolution inhibitors A technique for determining the extent of reaction and the molar absorptivity of the Fourier transform infrared ͑FTIR͒ peak created during the postexposure bake ͑PEB͒ reaction of the negative e-beam/x-ray Shipley resist, SAL 605, is described. Wafers were oven baked within a gas-tight bomb. The product of the linking reaction, methanol, was quantified from the gas in the bomb and within the resist film after the PEB. The ether peak, corresponding to the reaction between hexamethoxymethylmelamine ͑HMMM͒ and novolac was measured on the same wafer using FTIR. In addition, the absolute number of HMMM molecules reacted was measured by gel permeation chromatography to yield the number of moles methanol produced/HMMM reacted. The molar absorptivity for the ether peak, resulting from a reaction between an HMMM and a phenolic site on the novolac is 3.14Ϯ0.53ϫ10 5 cm 2 /mole. Under conditions sufficient for imaging in a 0.5 m thick film, the average number of reactions/HMMM molecule is 1.27Ϯ0.24. From previous work on the acid concentration in this resist ͓P. M. Dentinger, C. M. Nelson, S. J. Rhyner, J. W. Taylor, T. H. Fedynyshyn, and M. F. Cronin, J. Vac. Sci.Technol. B 14, 4239 ͑1996͔͒ each acid moiety created was found to catalyze an average of 26Ϯ8 events during the PEB process. It appears that no more than 1.5%-2% of the available phenolic sites in the film need to be reacted for the required differential dissolution rate, and that the film does not crosslink. The ramifications of this work on modeling this type of resist will also be discussed.

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Process enhancements for positive tone silylation

Cited by 8 publications

References 0 publications

Resist application effects on chemically amplified resist response

Resist application effects on chemically amplified resist response

Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabrication

Quantification of the extent of reaction in a negative, novolac-based, chemically amplified resist

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