Process development of high-k metal gate aluminum CMP at 28nm technology node

Hsien, Yeh-Hsin; Hsu, H. K.; Tsai, T. C.; Lin, Welch; Huang, Rao; Chen, C. H.; Yang, C. L.; Wu, J. Y.

doi:10.1016/j.mee.2011.04.013

Cited by 32 publications

(26 citation statements)

References 3 publications

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“…In order to avoid metal ion introduction, macro molecule hydroxylamine is selected as pH regulator, abbreviated as R (NH 2 ) 4 . So the macro molecule and soluble products can be removed away easily from the sample surface, the reaction for mula as follows:…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…According to the recent research report, lower than 45nm technology node for CMOS process, HKMG technique becomes the main stream, and Aluminum is used as gate electrode material for replace metal gate(RMG). The size of Aluminum line will be thinner and thinner, so how to control the removal rate and surface roughness becomes the research emphases of RMG Al-CMP [3][4].The low hardness and complicated electrochemical behavior of Aluminum would require a more sophisticated control over the mechanical parameters and slurry chemistries in its CMP process [5]. In this study, in order to achieve good planarity and low surface roughness, the alkaline medium, organic base as pH regulator and FA/O surfactant were selected.…”

mentioning

confidence: 99%

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Study on chemical mechanical ultra precision process technology of Aluminum Interconnected Line for ULSI

Niu¹,

Wang²,

Sun³

et al. 2012

Proceedings of the 2nd International Conference on Electronic and Mechanical Engineering and Information Technology (2012)

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Abstract. The chemical mechanical polishing ultra precision process technology mechanism of Aluminum Interconnected Line for ULSI was analyzed according the physical and chemical properties of Aluminum. In order to meet the request of environmental protection and reducing ion staining, the alkaline slurry was adopted. The selection reason of pH value regulator and surfactant was discussed, and their actions during polishing were analyzed. According to the experimental results and optimal technological parameters, the higher removal rate and lower surface roughness were gotten, which were 390nm/min and 0.47nm respectively. IntroductionAluminum was used as the important metal interconnection material from the first generation integrated circuit(IC) to ULSI manufacturing for its excellent properties, such as low resistivity, low melting point, good adhesive quality, and so on. Above 0.18μm technology node for silicon process manufacture, Aluminum and Aluminum alloy are still the key interconnection material [1].For the traditional manufacture process, the method of removal metal Aluminum was reactive ion etching(RIE) method. But for lower than 0.25μm technology node device, RIE was not the profit planarization method, for it could't removal the layer material completely which led to short circuit and lower wafer inner uniformity [2]. For the high precision request, the ultra precision process method of chemical mechanical polishing was adopted by semiconductor industries, which not only provided a promising method to achieve global planarization but also generated new possibilities for the development of innovative semiconductor manufacturing processes. According to the recent research report, lower than 45nm technology node for CMOS process, HKMG technique becomes the main stream, and Aluminum is used as gate electrode material for replace metal gate(RMG). The size of Aluminum line will be thinner and thinner, so how to control the removal rate and surface roughness becomes the research emphases of RMG Al-CMP [3][4].The low hardness and complicated electrochemical behavior of Aluminum would require a more sophisticated control over the mechanical parameters and slurry chemistries in its CMP process [5]. In this study, in order to achieve good planarity and low surface roughness, the alkaline medium, organic base as pH regulator and FA/O surfactant were selected.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Study on chemical mechanical ultra precision process technology of Aluminum Interconnected Line for ULSI

Niu¹,

Wang²,

Sun³

et al. 2012

Proceedings of the 2nd International Conference on Electronic and Mechanical Engineering and Information Technology (2012)

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“…Both the structure of polishing pads, such as pores and grooves, and the hardness of the pad affect the MRR and generate the scratches. Hsien et al [66] reported scratch generation by comparing the hard and soft pads. It was reported that the soft pad with lower pressure generated fewer scratches [66,67].…”

Section: Pad Surface Properties and Pad Debrismentioning

confidence: 99%

“…Hsien et al [66] reported scratch generation by comparing the hard and soft pads. It was reported that the soft pad with lower pressure generated fewer scratches [66,67]. Furthermore, Eusner et al [68] quantitatively analyzed the topography and material properties of fresh and broken-in pads to correlate with scratch generation on Cu CMP.…”

Section: Pad Surface Properties and Pad Debrismentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Approaches to defect characterization, mitigation, and reduction

Tseng

2016

Advances in Chemical Mechanical Planarization (CMP)

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Process development of high-k metal gate aluminum CMP at 28nm technology node

Cited by 32 publications

References 3 publications

Study on chemical mechanical ultra precision process technology of Aluminum Interconnected Line for ULSI

Study on chemical mechanical ultra precision process technology of Aluminum Interconnected Line for ULSI

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Approaches to defect characterization, mitigation, and reduction

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