Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin‐Ping

doi:10.1016/j.sse.2014.05.004

Cited by 27 publications

(17 citation statements)

References 21 publications

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“…The reason is due to the damage introduced by the dry process for device isolation, in which a thin n-type layer appears if the damage is due to a nitrogen vacancy. 25) The drain leakage current of the HFET at V D = 0.1 V (Fig. 5) is higher than that of the isolation region owing to the increased gate leakage current.…”

Section: Resultsmentioning

confidence: 90%

Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Niigata

Narano

Maeda

et al. 2014

Jpn. J. Appl. Phys.

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The miniaturization of the pH sensor has been improved with the development of the silicon ion-sensitive field-effect transistor (ISFET). Gallium nitride (GaN) is a possible candidate for developing a pH sensor owing to its superior resistance to environmental effects, superior conductivity, wide bandgap and chemical stability compared with silicon. In this study, a pH sensor fabricated on an AlGaN/GaN heterostructure was developed and its sensing characteristics were evaluated at temperature range from room temperature to 80 °C. The sensor shows good pinch-off and transfer characteristics at each temperature point in three standard buffered solutions. The drain current decreased and the threshold voltage showed a positive shift with pH increasing. Drain current decrease and positive threshold voltage shift were also noted with increasing temperature. The pH sensitivities (ΔV/pH) are 52.3, 57.2, 64.2, and 69.5 mV/pH at temperatures of 20, 40, 60, and 80 °C, respectively, which are close to the theoretical values at all the temperature points.

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Section: Resultsmentioning

confidence: 90%

Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Niigata

Narano

Maeda

et al. 2014

Jpn. J. Appl. Phys.

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“…This broad luminescence band could be attributed to transition from a shallow donor to a deep acceptor [7,8]. The shallow donor of the etched u-GaN may be the etching damage of the nitrogen vacancy V N according to our previous work [9,10], whereas the deep acceptor may be the native defect of the gallium vacancy V Ga [11][12][13]. The near band-edge luminescence intensity of all the samples was weaker than the YL intensity, which could be primarily attributed to the non-radiative centers at low doping concentrations in the u-GaN layer [14][15][16].…”

Section: Methodsmentioning

confidence: 76%

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Jiang

Wang

Zhang

et al. 2015

Applied Surface Science

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“…Owing to the dry etching damage in the gate recess process, the threshold voltages of both devices are about −3 V. The nitrogen vacancy (V N ) caused by the dry etching damage would form an n-type layer on the etched surface and should be responsible for the negative threshold voltage. 17,18) The gate-first device shows a maximum field-effect mobility of 163.8 cm 2 V −1 s −1 , which is relatively higher than that of the ohmic-first device on the same n + -GaN=SI-GaN wafer, and also higher than that of the ohmic-first device on the AlGaN=SI-GaN wafer in our previous experiments. 8,19,20) In summary, a non-annealing ohmic process was investigated and the results show that aside from the higher etching power, a higher substrate doping density is also necessary to form a non-annealing ohmic contact.…”

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confidence: 62%

Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process

Wang

Jiang

Zhang

et al. 2015

Appl. Phys. Express

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We report on a gate-first GaN metal–oxide–semiconductor field-effect transistor (MOSFET) based on a non-annealing ohmic process. The device was formed on an n+-GaN (30 nm, 1 × 1019 cm−3)/semi-insulating GaN wafer. The source and drain (Ti/Al/Ti/Au) were deposited after the contact region was treated using an inductively coupled plasma (ICP) dry etching system. Ohmic contact with a contact resistance of 0.48 Ω mm was realized at room temperature. A device fabricated by a gate-first process shows good pinch-off characteristics and a maximum field-effect mobility of 163.8 cm2 V−1 s−1.

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Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Cited by 27 publications

References 21 publications

Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process

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