1996
DOI: 10.1016/0040-6090(96)08535-5
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Process control of RF plasma assisted surface cleaning

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Cited by 25 publications
(12 citation statements)
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“…In surface technology applications, hydrocarbon films are exposed to low temperature discharges for surface treatment or simply for etching purposes . Ar plasmas are for example extensively used to activate polymer surfaces to enhance their adhesion, or to perform nonreactive etching for lithography or plasma cleaning . The central parameter characterizing the etching efficiency is the sputtering yield, defined as the ratio between flux of atoms ejected from a target and flux of incident ions .…”
Section: Introductionmentioning
confidence: 99%
“…In surface technology applications, hydrocarbon films are exposed to low temperature discharges for surface treatment or simply for etching purposes . Ar plasmas are for example extensively used to activate polymer surfaces to enhance their adhesion, or to perform nonreactive etching for lithography or plasma cleaning . The central parameter characterizing the etching efficiency is the sputtering yield, defined as the ratio between flux of atoms ejected from a target and flux of incident ions .…”
Section: Introductionmentioning
confidence: 99%
“…Both reducing and oxidizing plasma media were used to remove the organic shell from the as-deposited particle layers through a combination of sputtering, electron-induced reactions, and etching with free radicals. [20] However, it turned out that, due to the chemical nature of the removal process by etching with radicals and reactive ions, a chemical modification of the involved surfaces is inevitable. While the thermal radicals (with temperatures of a few 10 8C at most) react at the particle surface, the plasma-generated ions possess higher kinetic energies, which may enable them to penetrate the upper atomic layers, possibly resulting in implanted subsurface species.…”
Section: Introductionmentioning
confidence: 99%
“…increase in the density and energy of charged and excited species, increase of electrons density and temperature, and aids to change the discharge mode from capacitively coupling (E-mode) to inductively coupling (H-mode) [12][13][14][15] . Several authors already observed that when applied power is increased in the treatment of organic material, mass variation rate (MVR) increases as well, but there are important chemical and physical modifications in the treated material that generate difficulties to maintain a considerable etching rate [2][3][4]7,9,16 . In the present work a simple organic molecule, the Stearic Acid, was used as a contaminant model to investigate the influence of the applied RF power to the plasma on the degradation of the treated material, when the temperature is controlled and reactive (Ar-O 2 ) and non-reactive (Ar) gas mixtures are used.…”
Section: Introductionmentioning
confidence: 99%