Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling

Mitrovic, Bojan; Gurary, A.; Quinn, W. E.

doi:10.1016/j.jcrysgro.2006.11.247

Cited by 69 publications

(24 citation statements)

References 8 publications

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“…Both hydrogen and nitrogen are used as the primary carrier gasses. The "pressure-rotation rate" flow stability diagram based on computational fluid dynamic (CFD) studies is used to optimize total carrier gas flow and maintain laminar flow, maximize growth rates (alkyl consumption efficiency) and growth uniformity under typical high rotational speed (> 1000 revolutions per min (rpm)) at selected pressure and growth temperature (75,76) conditions.…”

Section: Methodsmentioning

confidence: 99%

(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

Papasouliotis

Balakrishnan

et al. 2015

ECS Trans.

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We are reporting on the epitaxial growth of Al/Ga/N films on 200 mm Si substrates carried out in Veeco's Propel rotating disk, single wafer, vertical MOCVD reactor. The Turbodisc reactor is designed for uniform alkyl and hydride flow distribution, and temperature profile, resulting in uniform and concentrically symmetric epilayer thickness and chemical composition. Results are presented on film stress and wafer curvature control facilitated by adjusting the thickness and growth conditions of individual layers in AlN/GaN superlattices. The growth of highly resistive, intrinsically carbon-doped GaN layers is studied, and the influence of growth conditions, growth temperature, pressure, and V/III ratio, on carbon incorporation rate, crystal quality, and surface morphology will be discussed in this paper. Carbon incorporation is enhanced at lower growth temperature, lower pressure, and lower V/III ratios; we have obtained concentrations as high as 3E19/cm 3 at a growth pressure of 35 Torr and growth temperature of 960 °C.

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Section: Methodsmentioning

confidence: 99%

(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

Papasouliotis

Balakrishnan

et al. 2015

ECS Trans.

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“…The momentum, heat, and mass transfers of gas mixture in the reactor are governed by four conservation equations that are coupled together [4]: continuity equation,…”

Section: Modeling Parameters and Processesmentioning

confidence: 99%

Computational analysis of GaAs/AlGaAs deposition in MOCVD vertical rotating disk reactor

Chen

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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A systematic computational fluid dynamic (CFD) study was performed to investigate the effects of operating parameters of chamber pressure and wafer carrier rotation rate on the GaAs/AlGaAs deposition rate and uniformity in vertical rotating disc metal organic chemical vapor deposition (MOCVD) reactors. It is shown that significant improvement of the reactors efficiency can be achieved by finding the optimal chamber pressure and wafer carrier rotation rate. By degrading chamber pressure and varying wafer carrier rotation, it is finally obtained the favorable conditions of the uniform distributions of velocity and temperature profiles inside the reactor, in which the thermal buoyancy forces are effectively controlled and the flow velocity above susceptor is further increased.

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“…All typical flow types encountered in a rotating-disc reactor have been shown to capture the effects of all process parameters on flow stability in such reactors [3][4][5]. Systematic CFD studies have investigated the effects of various operating parameters-such as chamber pressure, wafer-carrier rotation rate, growth temperature, and total carrier-gas flow rate for different carrier gases-on the deposition rate and uniformity in vertical rotating-disc MOCVD reactors [6,7].…”

Section: Introductionmentioning

confidence: 99%

Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor

Chen

Wei

et al. 2017

Coatings

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Abstract:A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 • C or 1238 • C; pressure: 100-300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms.

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Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling

Cited by 69 publications

References 8 publications

(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

Computational analysis of GaAs/AlGaAs deposition in MOCVD vertical rotating disk reactor

Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor

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