Probing the Mg2Si/Si(1 1 1) heterojunction for photovoltaic applications

Shevlyagin, A. V.; Chernev, Igor M.; Галкин, Н. Г.; Герасименко, А. В.; Гутаковский, А. К.; Hoshida, Hirofumi; Terai, Yoshikazu; Nishikawa, Naofumi; Ohdaira, Keisuke

doi:10.1016/j.solener.2020.09.085

Cited by 19 publications

(15 citation statements)

References 65 publications

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“…This is mainly caused by the different concentrations of Mg2Si and Si. The application of Mg2Si in the solar cells is also reported in [23], where the peak barrier at the conduction band is also observed.…”

Section: A Energy Bandmentioning

confidence: 73%

Enhanced Photoelectric Properties of Multilayer Graphene Mg₂Si/Si Heterojunction Photodetector

Sun

et al. 2022

IEEE Photonics J.

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Section: A Energy Bandmentioning

confidence: 73%

Enhanced Photoelectric Properties of Multilayer Graphene Mg₂Si/Si Heterojunction Photodetector

Sun

et al. 2022

IEEE Photonics J.

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“…This was mainly caused by different doping concentrations on both sides of the heterojunction. Refs [10,11] reported the study of Mg 2 Si/Si heterojunction in solar cells, and the band offset and peak barrier of the heterojunction were also observed. The height and width of the peak barrier decreased with the increase in the Si doping concentrations.…”

Section: Energy Bandmentioning

confidence: 99%

“…When the doping concentrations of the Si substrate was 10 19 and 10 20 cm −3 , the band shift further decreased, and the peak barrier at the heterojunction interface basically disappeared. A higher doping concentration was applied in the Si to reduce the effect of the bandgap space charge region, so that the height of the peak barrier became weak, and the peak width became narrow or even disappeared at the interface of the Mg 2 Si/Si heterojunction [11]. The increase in the Si substrate doping concentrations could alleviate the harmful effect of the band barrier, but it would reduce the responsivity and EQE of the heterojunction device.…”

Section: Energy Bandmentioning

confidence: 99%

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

Gao

Zou

et al. 2021

Photonics

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To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si PDs are required. First, the structural model of the Mg2Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg2Si and Si on the photoelectric properties of the Mg2Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg2Si/Si heterojunction interface. When the doping concentrations of Si and Mg2Si layer were 1017, and 1016 cm−3, respectively, the Mg2Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10−11 WHz–1/2 at 1000 nm, the maximum detectivity was 1.4 × 1010 Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg2Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.

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“…Mg 2 Si is an indirect bandgap, environmentally friendly semiconductor material which has been extensively studied for use as thermoelectric material [ 2 ], battery material [ 3 , 4 ], structural material [ 5 ], and composite material [ 6 ]. Mg and Si are abundant in nature, non-toxic, and pollution-free, and have eco-friendly characteristics [ 7 ]. It has a bandgap of 0.6–0.8 eV and a high absorption coefficient of more than 10 5 cm −1 around 500 nm [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

Technology CAD (TCAD) Simulations of Mg2Si/Si Heterojunction Photodetector Based on the Thickness Effect

Luo

et al. 2021

Sensors

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Research on infrared detectors has been widely reported in the literature. For infrared detectors, PbS, InGaAs, PbSe, InSb, and HgxCd1-xTe materials are the most widely used and have been explored for photodetection applications. However, these are toxic and harmful substances which are not conducive to the sustainable development of infrared detectors and are not eco-friendly. Mg2Si is a green, healthy, and sustainable semiconductor material that has the potential to replace these toxic and damaging photoelectric materials, making photoelectric detectors (PDs) green, healthy, and sustainable. In this work, we report on the results of our simulation studies on the PN junction Mg2Si/Si heterojunction PD. A model structure of Mg2Si/Si heterojunction PD has been built. The effects of Mg2Si and Si layer thickness on the optical and electrical performance of Mg2Si/Si heterojunction PD are discussed. For the purpose of this analysis, we consider electrical performance parameters such as I–V curve, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on-off ratio, response time, and recovery time. The simulation results show that the Mg2Si/Si heterojunction PD shows optimum performance when the thickness of Si and Mg2Si layers are 300 nm and 280 nm, respectively. For the optimized structure, the reverse breakdown voltage was found to be −23.61 V, the forward conduction voltage was 0.51 V, the dark current was 5.58 × 10−13 A, and the EQE was 88.98%. The responsivity was found to be 0.437 A/W, the NEP was 6.38 × 10−12 WHz1/2, and the detectivity was 1.567 × 1011 Jones. With the on-off ratio of 1566, the response time was found to be 0.76 ns and the recovery time was 5.75 ns. The EQE and responsivity peak wavelength of PD show a redshift as the thickness of Mg2Si increases. The Mg2Si heterojunction PD can effectively detect infrared light in the wavelength range of 400 to 1400 nm. The simulation results can be utilized to drive the development of green Mg2Si/Si heterojunction PD in the future.

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Probing the Mg2Si/Si(1 1 1) heterojunction for photovoltaic applications

Cited by 19 publications

References 65 publications

Enhanced Photoelectric Properties of Multilayer Graphene Mg₂Si/Si Heterojunction Photodetector

Enhanced Photoelectric Properties of Multilayer Graphene Mg₂Si/Si Heterojunction Photodetector

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

Technology CAD (TCAD) Simulations of Mg2Si/Si Heterojunction Photodetector Based on the Thickness Effect

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Probing the Mg2Si/Si(1 1 1) heterojunction for photovoltaic applications

Cited by 19 publications

References 65 publications

Enhanced Photoelectric Properties of Multilayer Graphene Mg2Si/Si Heterojunction Photodetector

Enhanced Photoelectric Properties of Multilayer Graphene Mg2Si/Si Heterojunction Photodetector

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

Technology CAD (TCAD) Simulations of Mg2Si/Si Heterojunction Photodetector Based on the Thickness Effect

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Resources

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Enhanced Photoelectric Properties of Multilayer Graphene Mg₂Si/Si Heterojunction Photodetector

Enhanced Photoelectric Properties of Multilayer Graphene Mg₂Si/Si Heterojunction Photodetector