Probing the impact of surface reactivity on charge transport in dimensional phase changed tungsten films

Chattaraj, Ananya; Khan, Shahjahan; Walczak, Łukasz; Kanjilal, A.

doi:10.1007/s10854-019-01145-y

Cited by 3 publications

(2 citation statements)

References 37 publications

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“…The peaks at about 445 eV for In3d and about 530 eV for O1s suggest that the films consist of the elements In and O. As shown in Figure 1c, the W4f spectrum exhibits two peaks at 35.3 eV and 37.4 eV in both the 3.7% and the 7.6% W-InOx, which correspond to the W4f7/2 and W4f5/2 peaks of WO3, respectively [13,14]. The result indicates the valence state of W is +6.…”

Section: Resultsmentioning

confidence: 92%

An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor

Xie,

Liang,

Geng

et al. 2024

Electronics

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Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage to form long-term plasticity. Here, we studied electrolyte-gated transistors based on InOx with tungsten doping (W-InOx). When the tungsten-to-indium ratio increased from 0% to 7.6%, the memory window of the transfer curve increased from 0.2 V to 2 V over a small sweep range of −2 V to 2.5 V. Under 50 pulses with a duty cycle of 2%, the conductance of the transistor increased from 40-fold to 30,000-fold. Furthermore, the W-InOx transistor exhibited improved paired pulse facilitation and successfully passed the Pavlovian test after training. The formation of WO3 within InOx and its ion intercalation into the channel may account for the enhanced synaptic plasticity.

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Section: Resultsmentioning

confidence: 92%

An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor

Xie,

Liang,

Geng

et al. 2024

Electronics

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“…where b is the full-width at half maximum (FWHM) of a diffraction peak, ε is the strain, 27,28 and D is the average crystallite size. The W-H equation basically gives a straight line, from where we can extract the average crystallite size and strain from the intercept and slope, respectively.…”

Section: Atomic Structurementioning

confidence: 99%

Atomic scale microstructural insights of superconducting β-tungsten thin films

Chattaraj

Patidar

Ganesan

et al. 2022

Journal of Materials Research

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Growth-dependent structural ordering and stability in β-tungsten films for spintronic applications

Chattaraj

Asirvatham

Das

et al. 2022

Journal of Applied Physics

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The β phase of tungsten has attracted great interest for spintronic applications due to its higher spin Hall angle compared to other elemental solids and large spin–orbit torque, but the stability of this phase is yet to be well understood as many different results are there in the literature mainly based on the film thickness, temperature, and overall growth conditions. The growth of films by sputter deposition has emerged as a promising technique to achieve β-W owing to its compatibility with current spintronic technology. We demonstrate here the efficient ability of dc magnetron sputtering to grow stable β-W films up to a thickness of ∼180 nm at room temperature by varying a set of deposition parameters like pressure, power, and deposition time and discuss the various underlying mechanisms. From these results, the optimized set of deposition parameters for growing β-W films is given. A clear understanding of the influence of oxygen in the atomic structure of β-W is obtained by varying the thickness of the films. This is confirmed from the ab initio molecular dynamics (MD) simulations, where the atomic structure is influenced by the oxygen doping concentration. A stable polycrystalline β phase can be achieved by controlled doping of oxygen. Additionally, a phase transformation from α to β with the doping of oxygen is also evident by MD simulations.

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Probing the impact of surface reactivity on charge transport in dimensional phase changed tungsten films

Cited by 3 publications

References 37 publications

An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor

An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor

Atomic scale microstructural insights of superconducting β-tungsten thin films

Growth-dependent structural ordering and stability in β-tungsten films for spintronic applications

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