Probing the electronic structure of bilayer graphene by Raman scattering

Malard, Leandro M.; Nilsson, Johan; Elias, D. C.; Brant, J. C.; Plentz, F.; Alves, Endrigo Gabellini Leonel; Neto, A. H. Castro; Pimenta, M. A.

doi:10.1103/physrevb.76.201401

Cited by 345 publications

(375 citation statements)

References 21 publications

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“…Thus, there are five independent parameters in the Hamiltonian (16) of intrinsic bilayer graphene, namely γ 0 , γ 1 , γ 3 , γ 4 and ∆ ′ . The band structure predicted by the tight-binding model has been compared to observations from photoemission [16], Raman [76] and infrared spectroscopy [55,56,[78][79][80][81]. Parameter values determined by fitting to experiments are listed in Table I for bulk graphite [67], for bilayer graphene by Raman [76,77] and infrared [55,56,80] spectroscopy, and for a This parameter was not determined by the given experiment, the value quoted was taken from previous literature.…”

Section: Bilayer Graphenementioning

confidence: 99%

The electronic properties of bilayer graphene

2013

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We review the electronic properties of bilayer graphene, beginning with a description of the tightbinding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energy. We take into account five tight-binding parameters of the Slonczewski-Weiss-McClure model of bulk graphite plus intra-and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects. CONTENTS

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Section: Bilayer Graphenementioning

confidence: 99%

The electronic properties of bilayer graphene

2013

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“…The 2D band of multilayer graphene can be fitted with multiple peaks, due to the splitting of the electronic band structure of the multilayer material [20]. The electronic structure of bilayer graphene (BLG) has also been probed by resonant Raman scattering [21]. Electrical fi eld effect studies have revealed that electron/hole doping in graphene will affect the electron-phonon coupling, and hence the Raman frequency [22 24].…”

Section: Nano Researchmentioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

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“…13 For bilayer graphene the parameters of the Slonzcewski-Weiss-McClure ͑SWMC͒ Hamiltonian have been fitted to reproduce double resonance Raman data. 21 A direct observation of the QP band structure is possible by ARPES, and a set of TB parameters has been fitted to the experimental ARPES data of graphene grown on SiC. 22 As a result they obtained a surprisingly large absolute value of the nearest-neighbor hopping parameter of 5.13 eV.…”

Section: Introductionmentioning

confidence: 99%

Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

et al. 2008

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A universal set of third-nearest-neighbor tight-binding ͑TB͒ parameters is presented for calculation of the quasiparticle ͑QP͒ dispersion of N stacked sp 2 graphene layers ͑N =1. . .ϱ͒ with AB stacking sequence. The present TB parameters are fit to ab initio calculations on the GW level and are universal, allowing to describe the whole "experimental" band structure with one set of parameters. This is important for describing both low-energy electronic transport and high-energy optical properties of graphene layers. The QP bands are strongly renormalized by electron-electron interactions, which results in a 20% increase in the nearest-neighbor in-plane and out-of-plane TB parameters when compared to band structure from density-functional theory. With the new set of TB parameters we determine the Fermi surface and evaluate exciton energies, charge carrier plasmon frequencies, and the conductivities which are relevant for recent angle-resolved photoemission, optical, electron energy loss, and transport measurements. A comparision of these quantitities to experiments yields an excellent agreement. Furthermore we discuss the transition from few-layer graphene to graphite and a semimetal to metal transition in a TB framework.

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Probing the electronic structure of bilayer graphene by Raman scattering

Cited by 345 publications

References 21 publications

The electronic properties of bilayer graphene

The electronic properties of bilayer graphene

Raman spectroscopy and imaging of graphene

Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

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