Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si() and Si() surfaces

Morphology and chemical state of Co?Mo catalysts for growth ofBsingle-walled carbon nanotubes vertically aligned on quartz substrates

“…This suggests that the BE shift due to the charging effect has been corrected well with the C 1s BE as a reference. The spectra of C 1s and Si 2p indicate the absence of acetate residues (288.2-289.3 eV) [26,27], metal carbides (282.7-283.1 eV) [28,29], and metal silicides (99.1-99.6 eV) [30][31][32]. Moreover, the spectra of O 1s indicate the formation of metal oxide species (530.3-530.4 eV) [33].…”

Co growth on Si(001) and Si(111) surfaces: Interfacial interaction and growth dynamics

“…We therefore described this phase as a ''CoSi 2 -like'' film. As shown in our previous paper, the crystallinity of this film improves upon annealing to 200°C or higher [36]. The observation of spontaneous silicide reaction also contradicts the assumption that there is a threshold thickness for silicide reaction to be feasible [37].…”

“…This is the same as the binding energy derived from analysis of bulk CoSi 2 samples, and also similar to clean Si substrates (99.2 ± 0.1 eV), within our experimental error. The Si 2p spectrum from CoSi 2 also does not display any noticeable energy shift during annealing [36]. For the Si signal detected at low Co coverage range, the main contribution would come primarily from the Si substrate (electron escape depth $15-20 Å ).…”

Optimal Cu buffer layer thickness for growing epitaxial Co overlayers on Si(111)7 × 7

“…However, upon deposition of Co onto a bare Si(111) surface, CoSi 2 is formed at the interface due to a reaction between Co and Si. 2,3 This leads to a deterioration of the magnetic properties and to the occurrence of a nonmagnetic layer up to a Co coverage of 6 monolayers. 4 Note that the Co films grown at room temperature (RT) have an amorphous structure as a result of a highly disordered Co/ Si(111) interface.…”

“…For example, hydrogen termination of Si substrates does not prevent the reaction of Co with Si. 3,5,6 At RT, the deposition of Co onto the submonolayer metal-induced Si reconstructions, Si(100)-c(4 Â 12)-Al and Si(111)-(5.55 Â 5.55)-Cu, leads to disordered Co layers which grow and transform into CoSi 2 islands upon annealing. 7 A similar behavior has been reported for Co on Si(111)5 Â 2-Au reconstruction.…”