Probing mechanical properties of graphene with Raman spectroscopy

Ferralis, Nicola

doi:10.1007/s10853-010-4673-3

Cited by 217 publications

(184 citation statements)

References 101 publications

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“…Strain also affects the Raman spectra of graphene [10], which is not without consequence given the fact that Raman spectroscopy is widely used in this context as characterization tool. In return, the change of the Raman spectrum induced by strain can be used to measure its characteristics [11,12], provided a quantitative theory of the Raman cross section be available [13,14]. These examples demonstrate how important it is to understand, measure and control the deformation of a graphene overlayer.…”

Section: Introductionmentioning

confidence: 99%

“…From now on, A, D, ν, and ν ′ will be assumed to be independent elastic constants, which they are not in the traditional plate theory. In the way this theory was derived, A = hC 11 , ν = C 12 /C 11 = ν ′ , and D = Ah 2 /12. For graphene, one cannot rely on expressions that involve the thickness h, which is ill defined (see Table 2 in Reference [48]).…”

Section: Introductionmentioning

confidence: 99%

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Elastic Properties and Stability of Physisorbed Graphene

Lambin

2014

Applied Sciences

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Graphene is an ultimate membrane that mixes both flexibility and mechanical strength, together with many other remarkable properties. A good knowledge of the elastic properties of graphene is prerequisite to any practical application of it in nanoscopic devices. Although this two-dimensional material is only one atom thick, continuous-medium elasticity can be applied as long as the deformations vary slowly on the atomic scale and provided suitable parameters are used. The present paper aims to be a critical review on this topic that does not assume a specific pre-knowledge of graphene physics. The basis for the paper is the classical Kirchhoff-Love plate theory. It demands a few parameters that can be addressed from many points of view and fitted to independent experimental data. The parameters can also be estimated by electronic structure calculations. Although coming from diverse backgrounds, most of the available data provide a rather coherent picture that gives a good degree of confidence in the classical description of graphene elasticity. The theory can than be used to estimate, e.g., the buckling limit of graphene bound to a substrate. It can also predict the size above which a scrolled graphene sheet will never spontaneously unroll in free space.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Elastic Properties and Stability of Physisorbed Graphene

Lambin

2014

Applied Sciences

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“…The sensitivity of the Raman G and 2D bands to both anharmonic coupling of phonon modes and carboncarbon length make Raman spectroscopy a useful tool for studying the temperature and strain dependence of graphene [5][6][7][8]. Recently, Late et al investigated the Raman spectra of single layer graphene on Si/SiO 2 substrates from 77K to 573K, and calibrated the temperature coefficient of the G and 2D band Raman modes to be ∂ω G /∂T = − 0.016 cm Raman G and 2D bands are also used to estimate the effect of strain in graphene [11][12][13][14].…”

mentioning

confidence: 99%

Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene

et al. 2012

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By thermally cycling single layer graphene in air, we observe irreversible upshifts of the Raman G and 2D bands of 24 cm -1 and 23 cm -1 , respectively. These upshifts are attributed to an in-plane compression of the graphene induced by the mismatch of thermal expansion coefficients between the graphene and the underlying Si/SiO 2 substrate, as well as doping effects from the trapped surface charge in the underlying substrate. Since the G and the 2D band frequencies have different responses to doping, we can separate the effects of compression and doping associated with thermal cycling.By performing the thermal cycling in an argon gas environment and by comparing suspended and on-substrate regions of the graphene, we can separate the effects of gas doping and doping from the underlying substrate. Variations in the ratio of the 2D to G band Raman intensities provide an independent measure of the doping in graphene that occurs during thermal cycling. During subsequent thermal cycles, both the G and 2Dbands downshift linearly with increasing temperature, and then upshift reversibly to their original frequencies after cooling. This indicates that no further compression or doping is 2 induced after the first thermal cycle. The observation of ripple formation in suspended graphene after thermal cycling confirms the induction of in-plane compression. The amplitude and wavelength of these ripples remain unchanged after subsequent thermal cycling, corroborating that no further compression is induced after the first thermal cycle. 3In the study of graphene, Raman spectroscopy is used widely for identifying the thickness, carrier concentration, temperature, and strain [1][2][3][4]. The sensitivity of the Raman G and 2D bands to both anharmonic coupling of phonon modes and carboncarbon length make Raman spectroscopy a useful tool for studying the temperature and strain dependence of graphene [5][6][7][8] that the effects of strain and doping cannot be neglected when calibrating the temperature coefficient of the Raman modes of graphene. In this work, we measure the Raman spectra of both suspended and supported graphene before, during, and after thermal cycling from 300K to 700K. Both the Raman G and 2D bands are studied systematically. Atomic force microscopy (AFM) is used to determine the suspended graphene profile variation before and after thermal cycling. Thermal cycling in air and Ar gas environments enables us to indentify changes associated with gas doping. In doing so, we are able to separate the effects of doping, compression, and temperature in graphene through the interpretation of the resulting Raman spectra.In this work, graphene flakes are deposited on Si/SiO 2 substrates using mechanical exfoliation [22,23]. The number of graphene layers are identified using This G band upshift is consistent with our previous work on suspended graphene, which showed a 25 cm -1 upshift in the supported region, while the suspended region remained constant after thermal cycling [30]. In this previous work, ripple formati...

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“…Even though the downshift of G ′ band usually denotes a stretching (tensile) strain, due to decreased phonon frequency from bond lengthening [70,71], the G ′ band position in the TERS spectra from the ridge, at 2691 cm −1 , is still far higher than the band position of 2674 cm −1 from unstrained and undoped graphene [72,73]. This means the shift of G ′ band from the ridge is actually a smaller compressive strain compared to neighbor area, not a stretching strain.…”

Section: Dmentioning

confidence: 98%

Tip-Enhanced Raman Scattering of Nanomaterials

Vantasin

Yan

Suzuki³

et al. 2015

e-J. Surf. Sci. Nanotech.

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Various kinds of carbon nanotube-based and graphene-based nanomaterials are considered as future materials for electronic devices due to their outstanding properties. This review paper reports tip-enhanced Raman scattering (TERS) studies of polymer nanocomposites containing carbon nanomaterials and graphenes. TERS is an emerging spectroscopic tool that combines scanning probe microscopy and Raman spectroscopy. Compared with normal Raman spectroscopy, TERS has much better spatial resolution and sensitivity. The usefulness of TERS technique in studying structure and interactions of nanomaterials is demonstrated by introducing four TERS studies.

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Probing mechanical properties of graphene with Raman spectroscopy

Cited by 217 publications

References 101 publications

Elastic Properties and Stability of Physisorbed Graphene

Elastic Properties and Stability of Physisorbed Graphene

Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene

Tip-Enhanced Raman Scattering of Nanomaterials

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