Probing kinetically excited hot electrons using Schottky diodes

Abstract

Hot electron generation was measured under the impact of energetic Ar and Rb ions on Ag thin film Schottky diodes. The energy-and angular-dependence of the current measured at the backside of the device due to ion bombardment at the frontside is reported. A sharp upturn in the energy dependent yield is consistent with a kinetic emission model for electronic excitations utilizing the device Schottky barrier as determined from current-voltage characteristics. Backside currents measured for ion incident angles of 630 are strongly peaked about 0 (normal incidence) and resemble results seen in other contexts, e.g., ballistic electron emission microscopy. Accounting for the increased transport distance for excited charges at non-normal incidence, the angular results are consistent with the accepted mean free path for electrons in Ag films. V