2021
DOI: 10.1039/d1ee01004b
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Probing fundamental losses in nanostructured Ta3N5 photoanodes: design principles for efficient water oxidation

Abstract: Detailed numerical simulations are performed to probe performance loss mechanisms and limiting parameters of Ta3N5-NRs based photoanodes. Device modelling enables the development of design strategies to realize efficient solar water oxidation.

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Cited by 32 publications
(44 citation statements)
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“…Such an approach has been applied to analyze various photocatalytic/photoelectrochemical systems such as particulate Al-dopes SrTiO 3 and Ta 3 N 5 thin-lm photoanode. 33,34 The methodology was detailed in the Simulation section S2 † and the employed parameters for a-Fe 2 O 3 were described in Table S1. † Firstly, the generation rate of the a-Fe 2 O 3 photoanode was calculated based on the AM 1.5G solar spectrum that reached to the electrode surface and the absorption coefficient, as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Such an approach has been applied to analyze various photocatalytic/photoelectrochemical systems such as particulate Al-dopes SrTiO 3 and Ta 3 N 5 thin-lm photoanode. 33,34 The methodology was detailed in the Simulation section S2 † and the employed parameters for a-Fe 2 O 3 were described in Table S1. † Firstly, the generation rate of the a-Fe 2 O 3 photoanode was calculated based on the AM 1.5G solar spectrum that reached to the electrode surface and the absorption coefficient, as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In view of this, a detailed numerical model based Ba‐doped or undoped Ta 3 N 5 –NRs was devised, which can effectively predict various factors contributing to performance losses, such as optical effects, charge carrier recombination, and resistivity. [ 36 ]…”
Section: Core‐shell Tandem Nanostructured Photoelectrode For Pec Wate...mentioning
confidence: 99%
“…In view of this, a detailed numerical model based Ba-doped or undoped Ta 3 N 5 -NRs was devised, which can effectively predict various factors contributing to performance losses, such as optical effects, charge carrier recombination, and resistivity. [36] Recently, a family of spinel ferrites with a general formula of MFe 2 O 4 (M: Cu, Mg, Zn, etc.) had been explored as light absorber for PEC water splitting, owing to its narrow bandgap, Figure 4.…”
Section: The Core Of High Absorbent Materialsmentioning
confidence: 99%
“…Numerical simulation of particulate photocatalysts and photoelectrodes based on FEM is a strong technique to investigate the electronic structure in materials during water splitting conditions under illumination and to obtain a strategy for highly efficient solarto-hydrogen devices. [40][41][42][43] The impact of the band structure, donor density, and thickness of an n-type semiconductor is comprehensively demonstrated for the negative shift of the onset potential for OER for zero-bias overall water splitting. The main target of this work is zero-bias overall water splitting by n-type semiconductor modification, even if the n-type photon absorber is made defectively and has high donor density (>1 Â 10 18 cm À3 ), as in the case of Ta 3 N 5 .…”
Section: Introductionmentioning
confidence: 99%