2010
DOI: 10.1021/nn101443d
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Probing Exciton Localization in Single-Walled Carbon Nanotubes Using High-Resolution Near-Field Microscopy

Abstract: We observe localization of excitons in semiconducting single-walled carbon nanotubes at room temperature using high-resolution near-field photoluminescence (PL) microscopy. Localization is the result of spatially confined exciton energy minima with depths of more than 15 meV connected to lateral energy gradients exceeding 2 meV/nm as evidenced by energy-resolved PL imaging. Simulations of exciton diffusion in the presence of energy variations support this interpretation predicting strongly enhanced PL at local… Show more

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Cited by 34 publications
(27 citation statements)
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“…We infer from this that the potential energy landscape indicated in Fig. 3b) also provides some of the sites at higher energies with sufficiently large barriers to exciton migration which cannot be overcome readily by average kinetic exciton energies of about 1 meV corresponding to the thermal energy at 17 K. Similar exciton localization has also been observed in single nanotube near-field PL studies by Georgi et al 47 Further support of diffusive exciton motion being responsible for ultrafast spectral diffusion can be obtained from the temperature dependent and spectrally resolved time-correlated single photon counting data shown in Fig. 4.…”
Section: A) B)supporting
confidence: 81%
“…We infer from this that the potential energy landscape indicated in Fig. 3b) also provides some of the sites at higher energies with sufficiently large barriers to exciton migration which cannot be overcome readily by average kinetic exciton energies of about 1 meV corresponding to the thermal energy at 17 K. Similar exciton localization has also been observed in single nanotube near-field PL studies by Georgi et al 47 Further support of diffusive exciton motion being responsible for ultrafast spectral diffusion can be obtained from the temperature dependent and spectrally resolved time-correlated single photon counting data shown in Fig. 4.…”
Section: A) B)supporting
confidence: 81%
“…Thus it appears that the purity of single photon antibunching is not severely affected by the presence of SD but depends rather on the degree of exciton localization along the tube axis, which is known to vary from tube to tube even at room temperature. 39 In addition to photon antibunching, we also observe pronounced side-peak bunching on the g 2 (τ) trace in Figure 5 at much longer time scales than the corresponding SD times of a few nanoseconds, which was never shown before for SWCNTs. This side-peak bunching is however typically observed in semiconductor QDs under resonant excitation of the p-shell and is interpreted to be caused by two-state submicrosecond blinking.…”
Section: Nano Letterssupporting
confidence: 58%
“…This could trap an exciton in a segment of the nanotube away from defects. 31 The nonradiative decay rate would decrease and thus the quantum efficiency would increase. Hence, we would expect a nanotube suspended in air to have a different diffusion constant from a nanotube on a surface or in a medium.…”
Section: N(t)mentioning
confidence: 99%