Probing Electron-Phonon Interaction through Two-Photon Interference in Resonantly Driven Semiconductor Quantum Dots

Reigue, Antoine; Iles-Smith, Jake; Lux, Fabian R.; Monniello, Léonard; Bernard, M.; Margaillan, Florent; Lemaı̂tre, A.; Martinez, A.; McCutcheon, Dara P. S.; Mørk, Jesper; Hostein, Richard; Voliotis, Valia

doi:10.1103/physrevlett.118.233602

Cited by 65 publications

(83 citation statements)

References 52 publications

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“…1(e). It drops to 0.24 as temperature reaches 20 K. This has been recently confirmed by similar measurements on QDs subject to negligible cavity-QED effects [52]. Even in the absence of pure dephasing (dotted line), the indistinguishability would fall to 0.42 at 20 K, owing to the rapid reduction of the ZPL fraction (η ZPL = 0.64 at 20 K) (see Fig.…”

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confidence: 68%

Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics

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Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zerophonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduces the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero phonon line with indistinguishabilities above 97% up to 18K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from 87% (resp. 24%) without cavity effect to more than 99% (resp 76%) at 0 K (resp. 20 K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.Indistinguishable single photons are the building blocks of optical quantum computation protocols and quantum networks [1][2][3]. This has motivated great efforts to develop devices generating on-demand indistinguishable single photons, using solid-state emitters such as diamond color centres [4, 5], molecules [6] or semiconductor quantum dots (QDs) [7][8][9][10][11][12]. In QDs, understanding the extrinsic sources of decoherence such as spin and charge noise [13] has recently enabled impressive progresses in the performances of these sources [11,12]. Yet, acoustic phonons generally remain an intrinsic and limiting source of dephasing.Indeed acoustic phonons are responsible for two kinds of dephasing processes. First, acoustic phonons induce a rapid and partial decay of coherence [14][15][16]. This non-Markovian dephasing dynamics is the time-domain counterpart of the emitter spectrum consisting of a sharp zero-phonon line (ZPL) sitting on top of a broad phonon sideband (PSB) [17][18][19]. Second, acoustic phonons can assist virtual transitions towards higher energy levels, resulting in a Markovian pure dephasing of the ZPL [3]. Such effects impose two severe limitations to obtain indistinguishable photons: (i) to work at low temperatures, typically below 10 K for QDs and (ii) to use spectral postselection of the ZPL. Indeed, even at zero temperature, phonon emission processes result in the presence of a PSB on the low energy side, fundamentally limiting the indistinguishability. In practice, the indistinguishability has been measured to rapidly drop with temperature even with spectral selection [21], and without it remains further away from unity [22].In typical self-assembled QDs, the emission fraction into the ZPL, η ZPL , represents typically 90% of the emission at 4K, a fraction that rapidly drops with temperature. Moreover, the photons emitted in the PSB are essentially incoherent, due to their broadband nature with respect to the natural linewidth. In a Hong-Ou-Mandel (HOM) experiment, only the fraction η ...

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confidence: 68%

Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics

et al. 2017

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“…The second process is virtual in nature, in which an incoming phonon drives a virtual transition between the s shell and higher-lying exciton states in the QD [40,47]. This is a pure-dephasing process where the scattering phonon induces a random phase change in the exciton, leading to broadening of the zero phonon line (ZPL).…”

Section: Virtual Phonon Processes In Rabi Oscillationsmentioning

confidence: 99%

“…To describe the effect of phonon interactions on the exciton dynamics, we shall use a polaron master-equation approach [33,39,47,51]. Here we apply the unitary transformation…”

Section: Appendix B: Rabi Oscillation Master Equationmentioning

confidence: 99%

Intrinsic and environmental effects on the interference properties of a high-performance quantum dot single-photon source

et al. 2018

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We report a joint experimental and theoretical study of the interference properties of a single-photon source based on a In(Ga)As quantum dot embedded in a quasiplanar GaAs microcavity. Using resonant laser excitation with a pulse separation of 2 ns, we find near-perfect interference of the emitted photons, and a corresponding indistinguishability of I = (99.6 + 0.4 − 1.4 )%. For larger pulse separations, quasiresonant excitation conditions, increasing pump power, or with increasing temperature, the interference contrast is progressively and notably reduced. We present a systematic study of the relevant dephasing mechanisms and explain our results in the framework of a microscopic model of our system. For strictly resonant excitation, we show that photon indistinguishability is independent of pump power, but strongly influenced by virtual phonon-assisted processes which are not evident in excitonic Rabi oscillations.

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“…(4) The energy difference between the ground exciton state and the firstexcited exciton state considerably increases in the presence of Coulomb interaction. It is important because it means there will be less pure dephasing of the ground state due to the virtual phonon decoherence processes [31].…”

Section: The Single Quantum Dot Geometrymentioning

confidence: 99%

“…7. For a nanowire of diameter above ≈60 nm (with h QD = 4 nm), the difference E becomes smaller than 1 meV, which makes it more challenging to experimentally address the ground-state exciton [31]. This is the first reason that here we are only considering nanowires with diameters up to 60 nm.…”

Section: The Single Quantum Dot Geometrymentioning

confidence: 99%

Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications

et al. 2017

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Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA):Taherkhani, M., Willatzen, M., Mørk, J., Gregersen, N., & McCutcheon, D. P. S. (2017). Type-II quantum-dot-innanowire structures with large oscillator strength for optical quantum gate applications. Physical Review B, 96(12) We present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots. For a single quantum dot, the poor overlap of the electron part and the weakly confined hole part of the excitonic wave function leads to a low oscillator strength compared to type-I systems. To increase the oscillator strength, we propose a double quantum dot structure featuring a strongly localized exciton wave function and a corresponding fourfold relative enhancement of the oscillator strength, paving the way towards efficient optically controlled quantum gate applications in the type-II nanowire system. The simulations are performed using a computationally efficient configuration-interaction method suitable for handling the relatively large nanowire structures.

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Probing Electron-Phonon Interaction through Two-Photon Interference in Resonantly Driven Semiconductor Quantum Dots

Cited by 65 publications

References 52 publications

Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics

Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics

Intrinsic and environmental effects on the interference properties of a high-performance quantum dot single-photon source

Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications

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