In most envisioned applications, full utilization of a graphene-carbon nanotube (CNT) construct requires maintaining the integrity of the graphene layer during the CNT growth step. In this work, we exhibit an approach towards controlled CNT growth atop graphene substrates where the reaction equilibrium between source hydrocarbon decomposition and carbon saturation into and precipitation from the catalyst nanoparticles shifts towards CNT growth rather than graphene consumption. By utilizing C 2 H 4 feedstock, we demonstrate that the low temperature growth permissible with this gas suppresses undesirable catalytic hydrogenation and dramatically reduces the etching of the graphene layer to exhibit graphene-CNT hybrids with continuous, undamaged structures.Recent efforts in fabricating three dimensional (3D) composite nanostructures consisting of two dimensional (2D) graphene and one dimensional (1D) nanomaterials of carbon 1-3 and conducting polymers 4 are of interest for a number of applications, including next-generation, high capacity, fast-discharge supercapacitors. For these types of energy storage applications, the advantages of graphene, such as large surface area-to-volume ratio and excellent conductivity, may be compromised due to self-aggregation resulting in poor charge transfer between the graphene flakes, the 1D materials, and the current collector. The growth of 1D nanostructures such as carbon nanofibers 5,6 or nanotubes 7,8 directly on graphene to yield hybrid 3D nano-architectures would, by design, circumvent this self-aggregation, while maintaining low contact resistance to enable effective electron transfer. [7][8][9] In our previous work, CNTs were grown by chemical vapor deposition (CVD) directly on graphene using CH 4 gas as a carbon source, and the performance of the resulting 3D nanoarchitecture as an advanced electrical double layer capacitor was characterized. 9 However, during this growth, the graphene layer was often found to be etched away at so-called "etched pits". The formation of these pits proceeded from hydrogenation 10-12 at 800°C in the presence of nickel (Ni) catalyst nanoparticles ((Ni) nanoparticle + C graphene + 2H 2 → Ni + CH 4 ). 13 Elongated etched lines in the graphene are attributed to etching by mobile nanoparticles. Subsequently, the addition of H 2 from the catalytic decomposition of the carbon source during the CNT growth step further contributes to the etching effect and can fully remove the graphene substrate. This etching process of the graphene substrate during CNT growth has thus far not been studied in the literature.Here we show that the high hydrocarbon conversion rate of C 2 H 4 , at lower temperature than CH 4 14 used in our previous study, 9 allows for an approach to CNT growth atop graphene substrates through fine tuning the process parameters including growth temperature and seed density. We confirm that the controlled use of C 2 H 4 is essential for balancing the competing processes of carbon deposition and carbon removal, which ultimately block undesir...