2021
DOI: 10.1007/s10854-021-07079-8
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Probing defects and their implications in pH-controlled ZnO QDs: a theory-aided experimental investigation

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“…Having evidenced the ability of the CV method in probing the trap states in ZnO QDs, the origins of the defects were further analyzed. According to the literature, there are likely six types of point defects in ZnO QDs, including zinc interstitials (Zn i ), oxygen vacancies (V O ), oxygen interstitials (O i ), Zn vacancies (V Zn ), Zn O (Zn in O‐site) and O Zn (O in Zn‐site) [27] . The positions of some point defects are 2.75–3.00 eV (Zn i →VBE), 2.50–2.75 eV (CBE→V Zn ), 1.65–2.17 eV (CBE→O i ) and 2.17–2.50 eV (CBE→V O ).…”
Section: Resultsmentioning
confidence: 99%
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“…Having evidenced the ability of the CV method in probing the trap states in ZnO QDs, the origins of the defects were further analyzed. According to the literature, there are likely six types of point defects in ZnO QDs, including zinc interstitials (Zn i ), oxygen vacancies (V O ), oxygen interstitials (O i ), Zn vacancies (V Zn ), Zn O (Zn in O‐site) and O Zn (O in Zn‐site) [27] . The positions of some point defects are 2.75–3.00 eV (Zn i →VBE), 2.50–2.75 eV (CBE→V Zn ), 1.65–2.17 eV (CBE→O i ) and 2.17–2.50 eV (CBE→V O ).…”
Section: Resultsmentioning
confidence: 99%
“…According to the literature, there are likely six types of point defects in ZnO QDs, including zinc interstitials (Zn i ), oxygen vacancies (V O ), oxygen interstitials (O i ), Zn vacancies (V Zn ), Zn O (Zn in O-site) and O Zn (O in Zn-site). [27] The positions of some point defects are 2.75-3.00 eV (Zn i !VBE), 2.50-2.75 eV (CBE!V Zn ), 1.65-2.17 eV (CBE!O i ) and 2.17-2.50 eV (CBE!V O ). As displayed in Table S3, the intra-bandgaps (CBE-defect gaps) determined by CV for ZnO, ZnO-EA and ZnO-TEA QDs are 1.70, 2.34 and 2.44 eV, respectively.…”
Section: Chemistry-a European Journalmentioning
confidence: 99%