Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

Chitara, Basant; Zhang, Kunyan; Cervantes, Martha Y. Garcia; Limbu, Tej B.; Adhikari, Bikram; Huang, Shengxi; Yan, Fei

doi:10.1557/s43579-021-00117-w

Cited by 5 publications

(5 citation statements)

References 26 publications

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“…[10] Additionally, nowadays there is also an increased focus on the integration of TMD heterojunctions for the design and fabrication of highthroughput electronic devices, [11] targeting large-scale fabrication, and tunability with notable results and progress. [12] Li et al reported MoSe 2 /MoS 2 heterojunctions as-fabricated using epitaxial growth techniques, indicating high-performance for hydrogen evolution catalytic reactions as mainly caused by band alignment and charge transport over its interface. [13] Hosseini et al reported that electron mobility (μ s ) is proportional to an applied strain and multilayer thickness with values of μ s ~ 300 cm 2 V −1 s −1 at 3% tensile strain in multilayer MoS 2 the surface.…”

Section: Introductionmentioning

confidence: 99%

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

López‐Galán

Ramos

2022

MRS Communications

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We present a theoretical study for MoS2/MoSe2 Van der Waals heterojunction in the armchair direction, and periodicity in the y-direction, under the mechanical deformation process to explore electronic structure vs. curvature angle. Our findings reveal that the heterojunction maintains chemical stability, even under high deformation, and the bandgap of the heterojunction is inversely proportional to curvature angle; the shift from semiconductor—with a bandgap of 0.8 eV—to semimetal occurs at deformation angles as low as 5°, having a gapless material. The mentioned transition corresponds mainly to distortion of half-filled molybdenum d-orbitals and chalcogen–chalcogen p-orbitals overlapping near the Fermi level. Graphical abstract

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Section: Introductionmentioning

confidence: 99%

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

López‐Galán

Ramos

2022

MRS Communications

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“…In particular, apparent phonon quenching in all of the A 1 and E 2 vibration modes was monitored within the Te/MoS 2 heterostructure, which was attributed to a decreased phonon absorption, charge transfer between the heterolayers, or dipole–dipole coupling. It is well established that the charge transfer between the heterostructure could cause sparse phonon and PL quenching . Therefore, we consider that charge transfer between the MoS 2 and Te crystals is responsible for the phonon quenching.…”

Section: Resultsmentioning

confidence: 99%

“…It is well established that the charge transfer between the heterostructure could cause sparse phonon and PL quenching. 49 Therefore, we consider that charge transfer between the MoS 2 and Te crystals is responsible for the phonon quenching. The photoluminescence spectra and their mappings for the MoS 2 and Te/MoS 2 heterostructure were obtained to confirm the charge transfer between the MoS 2 and Te nanomaterials, as shown in Figures 2c and 2d.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Performance 1D–2D Te/MoS₂ Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

Park,

Kim,

You

et al. 2024

ACS Appl. Electron. Mater.

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This study presents vertically stacked van der Waals heterojunctions comprising multilayered tellurium (Te) and exfoliated molybdenum disulfide (MoS 2 ) for high-performance broadband phototransistors exhibiting tunable giant persistent photoconductivity. The type I heterojunction configuration significantly enhances and broadens spectral responsivity due to its large absorption cross section and optimal band alignment. The photodetector achieves a relatively excellent responsivity of 209 A/W and a high detectivity of 3.4 × 10 13 under visible wavelength irradiation as well as a comparable responsivity of 10 A/W under infrared wavelength. Notably, the giant persistent photoconductivity in this architecture can be modulated by the drain voltage (V DS ) and the wavelength of the incident light. This work paves the way for highperformance, heterostructured TMDC-based futuristic optoelectronic applications.

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“…For example, the heterojunction of 2D Te and transition metal dichalcogenide can construct the highly-efficient solar cells 33 . Other infrared photodetectors using Te-based vdW heterojunctions achieved a high detectivity and fast response time 23 , 32 . However, few studies have been carried out on the high-performance THz modulators integrated with 2D Te heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions

Zhang,

Liang,

Zhou

et al. 2024

Light Sci Appl

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High-performance active terahertz modulators as the indispensable core components are of great importance for the next generation communication technology. However, they currently suffer from the tradeoff between modulation depth and speed. Here, we introduce two-dimensional (2D) tellurium (Te) nanofilms with the unique structure as a new class of optically controlled terahertz modulators and demonstrate their integrated heterojunctions can successfully improve the device performances to the optimal and applicable levels among the existing all-2D broadband modulators. Further photoresponse measurements confirm the significant impact of the stacking order. We first clarify the direction of the substrate-induced electric field through first-principles calculations and uncover the unusual interaction mechanism in the photoexcited carrier dynamics associated with the charge transfer and interlayer exciton recombination. This advances the fundamental and applicative research of Te nanomaterials in high-performance terahertz optoelectronics.

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Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

Cited by 5 publications

References 26 publications

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

High-Performance 1D–2D Te/MoS₂ Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions

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Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

Cited by 5 publications

References 26 publications

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

High-Performance 1D–2D Te/MoS2 Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions

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High-Performance 1D–2D Te/MoS₂ Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity