Probabilistic distribution and noise factor of solid state photomultiplier signals, taking into account cross-talk processes

Vinogradov, Sergey; Vinogradova, T. R.; Shubin, V. G.; Shushakov, D. A.

doi:10.3103/s1068335609090012

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…Thus, th SiPMs performance is degraded considerably by afterpulsing and even more by optical crosstalk. 7 The introduction of an effective OC suppression may leverage the SiPM device as a high performance low level light sensor for various experiments. The probability has been estimated by triggering on single pulses and counting all events within a typical trapping time slice.…”

Section: Introductionmentioning

confidence: 99%

Reduction of optical crosstalk in silicon photomultipliers

Dietzinger

Iskra²,

Ganka

et al. 2012

SPIE Proceedings

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The Silicon Photomultiplier (SiPM) is a novel device for low level light detection in various applications, for example scintillator-and fiber readout. 1,2 The SiPM is insensitive to magnetic fields and has a high photon detection efficiency. Current devices have a high optical crosstalk probability, which causes a significant increase of the excess noise factor. 3 It may replace traditional Photo Multiplier Tubes (PMT) when the optical crosstalk is reduced to a lower level of below 10%.Depending on the quantity of hot electrons in the Geiger discharge approximately three to fifty secondary photons (in average three photons per 10 5 avalanche electrons 4 ) with a wavelength range from 450nm to 1600nm are emitted from the excited cell in all directions. 5 Some of those secondary photons cause the discharge of the neighboring cell. 6,7 The different mechanism of optical crosstalk are categorized as direct and indirect crosstalk.To reduce direct crosstalk an optical barrier has to be implemented between the single micro cells. 8 Thus, we have investigated different technological concepts with regard to the trench shape, the trench etching process as well as the trench fill material.

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Section: Introductionmentioning

confidence: 99%

Reduction of optical crosstalk in silicon photomultipliers

Dietzinger

Iskra²,

Ganka

et al. 2012

SPIE Proceedings

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On the prospects of application and development of solid-state photomultipliers for the task of analog detecting of pulsed optical signals

Bogdanov

Kolobov²,

Levin³

et al. 2018

Physics and Simulation of Optoelectronic Devices XXVI

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Influence of optical radiation parameters on the amplitude characteristics of silicon photoelectron multipliers

Asayonak

Зеневич

Novikau

et al. 2020

Vescì Akademìì navuk Belarusì. Seryâ fizika-tehničnyh navuk

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At present, silicon photoelectronic multipliers with a low voltage, high sensitivity in the visible and near infrared spectral regions, and large amplification factors are often used to record optical radiation in a wide range of intensities of the visible and near infrared spectral regions. The purpose of this article is to determine the dependence of the type of amplitude distribution of pulses, created by silicon photoelectronic multipliers, on the intensity of the recorded optical radiation. As research objects, commercially available Ketek PM 3325 and ON Semi FC 30035 silicon photomultiplier tubes have been used, as well as multipliers from a pilot batch manufactured by OJSC “INTEGRAL” (Republic of Belarus). The paper studies the amplitude distribution of voltage pulses, formed on the load resistor of silicon photoelectronic multipliers by the photocurrent for various values of the energy exposure of optical pulses. The range of values of the energy exposure of optical pulses was determined at which the amplitude distributions of these pulses have pronounced peaks. It was found out that with increasing energy exposure of the optical pulse, part of the peaks disappears. It was established that all the dependencies of the average amplitude of such pulses on the magnitude of the energy exposure of the optical pulse for silicon photomultiplier tubes have a linear section. The performed experimental studies showed that an increase in the energy exposure of optical pulses results in an increase in the dispersion of the amplitude distribution of pulses. It was found that for a linear dependence of the energy exposure of the optical pulse on the optical pulse duration in the range from 50 ns to 1 μs, the studied silicon photoelectronic multipliers formed voltage pulses of 1 μs duration with the same rising and falling edges. In this case, the average amplitude of these pulses had a linear dependence on the duration of the optical pulse. The results can be used in design of photodetector devices for monitoring the level of ionization radiation for nuclear power plants, for quantum information systems and in optical communications for transmitting information with monitoring the presence of information leakage channels.

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Probabilistic distribution and noise factor of solid state photomultiplier signals, taking into account cross-talk processes

Cited by 3 publications

References 8 publications

Reduction of optical crosstalk in silicon photomultipliers

Reduction of optical crosstalk in silicon photomultipliers

On the prospects of application and development of solid-state photomultipliers for the task of analog detecting of pulsed optical signals

Influence of optical radiation parameters on the amplitude characteristics of silicon photoelectron multipliers

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