PROBA-II Technology Demonstration Module In-Flight Data Analysis

Pulsed laser test results for NAND flash memories are compared with broad beam heavy ion results and also with heavy ion results obtained with the collimated Milli-Beam™ source. The pulsed laser measurements reported here, with smaller focused spot sizes and as a function of the incident pulse energy, serve to reconcile the previously reported inconsistencies. The Milli-Beam™ and pulsed laser results appear to be consistent, and differences from the broad beam heavy ion results can be explained. The results suggest that the high current SEFIs reported by us and others arise from multiple ion (or multiple photon) interactions, and are not associated with single ion strikes.

Section: Discussionmentioning

confidence: 99%

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Oldham¹,

Friendlich

Wilcox

et al. 2012

“…The energy resolution was determined to be < 1% in previous calibrations with heavy ions. 2) An ESA SEU Monitor Atmel chip was used to measure the beam size and homogeneity over its 1.9×1.9 cm 2 sensitive surface [18], [19]. Its software allows identifying the number and position in space of the bitflips between each read/write cycle.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Fragmented Ultrahigh-Energy Heavy Ion Beam and Its Effects on Electronics Single-Event Effect Testing

Sacristán Barbero,

Slipukhin,

Cecchetto

et al. 2024

Ultra-high energy (> 5 GeV/n) heavy ion beams exhibit different properties when compared to standard and high energy ion beams. Most notably, fragmentation is a fundamental feature of the beam that may have important implications for electronics testing given the ultra-high energies, and hence ranges, preserved by the fragments. In this work, both the primary lead ion beam, available in the CERN North Area, and its fragments are characterized by means of solid-state detectors. This input is later used to improve the measurements of Single Event Effects in commercial components with this beam. Moreover, the energy deposition distribution in the solid-state detectors is compared to that obtained with Monte Carlo simulations.

“…The SEL RPP depth of a deep submicron SRAM is estimated to be m using TPA laser testing [13]. In the recent latchup rate calculations, the SV thickness of deep submicron SRAMs is set to m [4], [6] or m [5], [7]- [9], [11]. In this paper, the main point is to investigate the influence of SV number on SEL rate and so the SV thickness is assumed to be the classical value of m.…”

Section: Sel Rate Predictionsmentioning

confidence: 99%

“…As for memory device, there are two empirical practices to deal with the SEL SV number: one assumes that there is only one SV in the whole device [4]- [6], another assumes that there are as much SEL SVs as the number of memory cells [7]- [9]. The number of SV, which has not been clearly stated in some SEL rate predictions [10]- [13], should be one of the two assumptions.…”

Section: Introductionmentioning

confidence: 99%

Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test

Han

Feng

et al. 2015

Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model of sensitive volume. However it is not clear about the number of sensitive volume in the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to deal with the latchup sensitive volume number: one assumes that there is only one sensitive volume in the whole device; another assumes that there are as much sensitive volumes as the number of memory cells. The latchup sensitive volume number of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based on the two assumed and measured sensitive volume number, the single event latchup rates of the device are calculated and compared. The results show that pulsed laser could be a powerful tool to obtain the real sensitive volume number in the device, which is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the assumption of the sensitive volume number as one or as much as the number of memory cells.Index Terms-In-flight rate, pulsed laser, sensitivity mapping, single event latchup (SEL), SRAM.