Private-to-private communications over the internet

Kara, A.

doi:10.1109/mc.2004.1297242

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…The dopant concentrations were determined with the use of inductively coupled plasma-optical emission spectroscopy (ICP-OES) method. According to the obtained data, the distribution coecients have been estimated as: k Er ≈ 0.7; k Tm ≈ 0.8 [24]. Therefore, it should be pointed out that erbium and thulium could be relatively easily introduced into GdVO 4 lattice.…”

Section: Introductionmentioning

confidence: 87%

Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method

et al. 2012

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The GdVO4 single crystals, both undoped and doped with erbium or thulium, were studied by means of X-ray diraction topographic methods exploring laboratory and synchrotron radiation sources. Variously developed block structure, caused probably by thermal stresses, was revealed. The highest crystallographic perfection was observed in the crystal doped with 4 at.% of thulium, which was free of the grain boundaries in the end part. Contrary to that, the dierences in structural perfection between samples cut out from various regions of the crystal and for dierent kinds of doping, were less distinct in other crystals. The diraction topographic methods enabled the statement that the misorientation between various blocks is in the range of several arc minutes.

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Section: Introductionmentioning

confidence: 87%

Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method

et al. 2012

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“…The GHS re-encrypt the information and forward the message to the appropriate home's IP address. In parallel and later Kara [16,17] proposed an almost identical scheme. In this scheme, the mobile client's first message to the trusted third party contains security information required by the home automation system to establish end-to-end security.…”

Section: Related Workmentioning

confidence: 99%

Secure remote access to home automation networks

Gill

Yang

Wang

2013

IET Information Security

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“…Materials and CL Devices. SiO x films were deposited by chemical vapor deposition (CVD) on Si substrates (200 mm in diameter) on which patterns with a single Cu damascene layer were superimposed [3]. The wafers were planarized with a downward pressure and finely polished.…”

Section: Experimental and Computational Proceduresmentioning

confidence: 99%

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

Pezzotti

2007

SSP

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Electron-stimulated (cathodo)luminescence spectroscopy is quantitatively used for obtaining information about the residual stress fields piled up in semiconductor materials and devices during manufacturing. This additional micromechanical output can be added to the microscopic structural/chemical information available in the scanning electron microscope (SEM) by other conventional techniques. Independent of the physical mechanisms behind the luminescence emission, the spectral position of selected cathodoluminescence (CL) bands, observed in both crystalline and glassy materials, is shown to possess high stress sensitivity and thus suitability as a sensor for residual stress assessments. In this paper, we first quantitatively characterize the stress dependence of typical CL bands observed in ceramic and glassy semiconductor materials. Then, based on this knowledge, applications are shown of two-dimensional residual stress mapping on the nano-meter scale in electronic devices involving atomically sharp interfaces, according to an optimized automatic procedure performed into a field-emission gun (FEG-)SEM.

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Private-to-private communications over the internet

Cited by 6 publications

References 11 publications

Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method

Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method

Secure remote access to home automation networks

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

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