Pristine and Group Iv Doped Boron Nitride Single-Wall Nanotubes for Hydrogen Storage: A Density Functional Theory Computational Investigation

Abstract

In this report, a density functional theory (DFT) computational approach was used to investigate the structural and electronic properties of molecular hydrogens adsorbed on single-walled boron nitride nanotubes (BNNTs) with/without doped by group IV elements, such as carbon (C), silicon (Si), and germanium (Ge) atom. The twelve hydrogen molecules (H2) were added to the outer surfaces of BNNT frameworks. Geometry optimization calculations were performed to find the local energy minima of the BNNTs nanostructures with the molecular hydrogens at the DFT/B3LYP/6-31G level of theory. By employing single-point calculations at the B3LYP/6-31G* level of theory, the equilibrium geometric structures were then utilized to find the electronic structures of hydrogen molecules adsorbed on the surfaces of BNNT frameworks. The results showed that the bond lengths of B-N are in the range of1.44 Å – 1.48 Å. The optimized distances of hydrogen molecules from the surfaces of BNNTs were predicted to be 3.1 Å – 3.2 Å. Moreover, the computed HOMO-LUMO energies of molecular hydrogens adsorbed on the surface of BNNTs are about 2.2 eV – 4.3 eV. For the surface map of HOMO, the electron density distribution of hydrogen molecules adsorbed on the surface of pristine BNNT was localized in the N-tip. While in the case of doped BNNTs, the electron densities of HOMOs were focused on the group IV elements. The B-tips on the pristine and doped BNNTs possess the major contribution to the LUMO.