Prismatic punching defects in CdTe compounds

Kim, K.H.; Bolotnikov, A. E.; Camarda, G. S.; Franc, J.; Fochuk, P.; James, R. B.

doi:10.1016/j.jcrysgro.2013.12.015

Cited by 10 publications

(4 citation statements)

References 9 publications

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“…where C0 is the initial concentration of diffuser, D is the diffusion coefficient, x is the distance, and t is the time. In a previous experiment, Cd in-diffusion mechanism in Terich CZT follows diffusion via Cd vacancies [2]. However, Cd out-diffusion mechanism in Cd-rich CZT follows diffusion via Cd interstitials.…”

Section: IImentioning

confidence: 74%

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Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity

Kım

Hwang

et al. 2018

IEEE Trans. Nucl. Sci.

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The presence of Te secondary-phase defects (i.e., Te inclusions and Te precipitates) is a major factor limiting the performance of CdZnTe (CZT) X-and gammaray radiation detectors. We find that Te secondary-phase defects in CZT crystals can be removed through post-growth, two-step annealing without creating new trapping centers (i.e., prismatic punching defects). Two-step annealing (with the first in a Cd pressure and the second one in a Te pressure) was demonstrated to be effective in removing the Te secondary-phase defects, while preserving the electrical resistivity of the CZT detector.The first step involves annealing of semi-insulating CZT under a Cd overpressure at 700/600 (CZT/Cd) for 24 hours, which completely eliminated the Te-rich secondaryphase defects (Te inclusions). However, it resulted in a lower resistivity of the samples (down to 2 × 10 4-6 Ω•cm). A subsequent annealing step involves processing CZT under a Te ambient condition at 540/380 (CZT/Te) for 120 hours, which restored the crystal's resistivity to 6.4 × 10 10 Ω•cm without creating new Te secondary-phase defects. However, Te inclusions reappeared in the case of unnecessarily long Te ambient annealing. Pulse height spectra taken with the two-step annealed CZT detectors showed improved detector performance due to a reduced concentration and size of Te secondary-phase defects. Index Terms-CdZnTe, two-step annealing, high resistivity, real-time monitoring, pulse height spectra I.

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Section: IImentioning

confidence: 74%

“…Annealing of CZT under Cd overpressure can eliminate Te-rich secondary phase defects completely. However, it leaves prismatic punching defects over the entire CZT volume [2]. It also decreases the resistivity of CZT to 1 ~ 100 Ω•cm.…”

Section: Introductionmentioning

confidence: 99%

Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity

Kım

Hwang

et al. 2018

IEEE Trans. Nucl. Sci.

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“…A slightly increased dislocation density has been found around Te inclusions [195]. A slightly increased dislocation density has been found around Te inclusions [195].…”

Section: Precipitates and Inclusionsmentioning

confidence: 79%

Vertical Bridgman Growth of Binary Compound Semiconductors

Jurisch

Eichler

Bruder

2015

Handbook of Crystal Growth

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“…The annealing process was considered as an alternative way to evaluate the dislocations associated with SP. Kim et al 15 observed star-shaped defects with their positions corresponding to those of Te-rich SP particles in CdTe-based compounds after annealing under Cd overpressure, by white-beam X-ray diffraction topography. Sheng et al 16 revealed that dislocation multiplication occurred in regions near Te inclusions after annealing by etching.…”

Section: Introductionmentioning

confidence: 99%