Printed transistors made of 2D material-based inks

Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks

“…The two prevalent inkjet printing modes are continuous inkjet (CIJ) and drop-on-demand inkjet (DoD), which differ in whether the flow of ink droplets is continuous or only generated when required. More descriptions of the inkjet printing techniques can be found in existing review articles. ,,, Today, most inkjet printers for TMD inks are based on the DoD mode for its simple and robust operation (Figure a). For example, a wafer-scale MoS 2 thin film with designed patterns was printed on a SiO 2 /Si substrate using colloidal ink materials (Figure b) …”

Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm

“…Despite the above advantages, printing lags behind conventional techniques in pattern resolution, and much work is needed related to ink development, tailoring its rheological properties, and long-term stability. These issues continue to receive attention in order to advance the competitiveness of printing technology to fabricate two-dimensional material-based devices. , To our knowledge, there is no report on the printing of 2D MoSe 2 layers on a compound semiconductor GaAs for PD application. GaAs is a direct bandgap semiconductor with high electron mobility, surpassing that of silicon, making it suitable for high-speed optoelectronics devices such as infrared emitting diodes, laser diodes, and photovoltaic cells.…”

Printed High-Adhesion Flexible Electrodes Based on an Interlocking Structure for Self-Powered Intelligent Movement Monitoring

“…Transition metal carbides, carbonitrides, and nitrides, called MXenes, are a new and popular family of two-dimensional materials. − MXene-based materials and devices have been extensively used in the fields of energy harvesting and storage , and flexible electronics , as a result of their high conductivity, controllable surface terminal, and adjustable morphologies. − The generic chemical formula of MXenes is M n +1 X n T x , where M is a transition metal, X is C or N, and T is a surface terminator. , MXenes are typically obtained by selectively removing the “A-element” layer (Al or Ga) from the MAX phase by chemical etching methods. , Therefore, solution-processed MXene enables the use of printing and coating technologies for device fabrication, , such as transistors, radio-frequency antennas, supercapacitors, flexible sensors, , and patterned conductive electrodes . Printing technologies present critical advantages over traditional vacuum filtration and self-assembly methods, including a simple fabrication process, compatibility with the target substrate, cost performance, and large-volume manufacturing. , …”

“…11,12 MXenes are typically obtained by selectively removing the "A-element" layer (Al or Ga) from the MAX phase by chemical etching methods. 13,14 Therefore, solution-processed MXene enables the use of printing and coating technologies for device fabrication, 15,16 such as transistors, 17 radio-frequency antennas, 18 supercapacitors, 19 flexible sensors, 20,21 and patterned conductive electrodes. 22 Printing technologies present critical advantages over traditional vacuum filtration and self-assembly methods, including a simple fabrication process, compatibility with the target substrate, cost performance, and large-volume manufacturing.…”