Printed Nonvolatile Memory for a Sheet-Type Communication System

Sekitani, Tsuyoshi; Zaitsu, K.; Noguchi, Yuichi; Ishibe, Kiyoshiro; Takamiya, Makoto; Sakurai, Takayasu; Someya, Takao

doi:10.1109/ted.2009.2015169

Cited by 132 publications

(107 citation statements)

References 29 publications

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“…[11] The progress in piezoelectric polymers until 2000 has been reviewed by Fukada et al [12] and on patterned piezo, pyro and ferroelectricity of poled polymers up to 2010 by Qiu. [13] Integrated infrared sensors, [14] an all-printed ferroelectric active matrix sensor network, [15] a sheet type communication system [16] and a Braille display where P(VDF-TrFE) is used as a transducer have been reported. [ 17 ] Applications are envisaged in conformable touch keypads, electronic skin and panoramic motion sensors.…”

Section: Field-effect Transistorsmentioning

confidence: 99%

Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

et al. 2013

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Section: Field-effect Transistorsmentioning

confidence: 99%

Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

et al. 2013

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“…[83] The circuits were fabricated with low-cost printing techniques and thermal evaporation. Their implementation combines two regular organic FETs with each FeFET to enable access to individual bits.…”

Section: Ferroelectric Field-effect Transistorsmentioning

confidence: 99%

Organic Nonvolatile Memory Devices Based on Ferroelectricity

et al. 2010

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A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low‐cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field‐effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

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“…Therefore, alternative patterning technologies are being investigated. For instance P(VDF-TrFE) films have been patterned by ink jet printing, 2,3 photo-crosslinking upon adding a bisazide photoinitiator, 4 microimprinting, 5,6 nanoimprint lithography 7 and nano-embossing. 8,9 A review on patterned piezo-, pyro-and ferroelectric polymers has been reported in 2010.…”

Section: Introductionmentioning

confidence: 99%

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Lenz

Zhao

Richardson

et al. 2015

Physica Status Solidi (a)

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Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDF-TrFE)) interdigitated with the electrically insulating polymer polyvinyl alcohol (PVA). Micrometer size line gratings of both polymers were fabricated over large area by solution micromolding, a soft lithography method. The binary linear arrays were realized by backfilling with the second polymer. We investigated in detail the device physics. The electrical equivalent circuit is a linear capacitor of PVA in parallel with a ferroelectric capacitor of P(VDFTrFE). The binary arrays are electrically characterized by both conventional Sawyer-Tower and shunt measurements. The dependence of the remanent polarization on the array topography is explained by numerical simulation of the electric field distribution.

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Printed Nonvolatile Memory for a Sheet-Type Communication System

Cited by 132 publications

References 29 publications

Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

Organic Nonvolatile Memory Devices Based on Ferroelectricity

Microstructured organic ferroelectric thin film capacitors by solution micromolding

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