Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon

Abstract

We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser (PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defect-free Si photonic crystal (PC) bandedge cavity. Single mode lasing was achieved for a large area laser, with a side-mode suppression ratio of 28 dB, for lasing operation temperature ~200 K. Two types of lasers were demonstrated operating at different temperatures. Detailed modal analysis reveals the lasing mode matches with the estimated lasing gain threshold conditions. Our demonstration promises a hybrid laser sources on Si towards three-dimensional (3D) integrated Si photonics for on-chip wavelength-division multiplex (3D WDM) systems for a wide range of volume photonic/electronic applications in computing, communication, sensing, imaging, etc.

Nanoimprinted perovskite metasurface for enhanced photoluminescence

“…A Perkin Elmer Lambda 900 spectrometer was used for the UV-Vis transmission and reflectance measurements, with perovskite thin film and NIL metasurface prepared on glass substrates. A micro-photoluminescence (μPL) setup was employed for both low-temperature and room-temperature PL measurements [30,31]. To evaluate the emission characteristics experimentally, the perovskite samples were first mounted on a temperature controlled stage inside a cryostat.…”

Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

“…In recent years, the impressive progress of NM transfer and stacked NMs in photonic applications has been implemented; one main research focus is integrating III-V material or efficient light-absorbing material onto silicon substrate for silicon photonics applications, including a vertical cavity laser with two Si photonic crystal (PC) mirrors [12], first-order diffraction-based surface emitting lasers with a Si PC pattern [30], an edge-emitting laser on Si substrate [38], multi-color photodetectors [39] and a cavity-enhanced Ge photodetector on a silicon on insulator (SOI) substrate [40]. The other is to take advantage of the flexible mechanical property to realize bendable phototransistors and photodetectors [25,[41][42][43] and light-emitting diodes (LEDs) [44] by transfer printing a very thin membrane layer onto a plastic substrate.…”

“…Pioneered by Rogers et al, a polydimethylsiloxane (PDMS) stamp-assisted transfer printing process has been used to transfer a variety of crystalline semiconductor NMs on different foreign host substrates. This heterogeneous materials stack could be integrated with Si and flexible substrate applications [25][26][27][28][29][30][31][32][33].…”

Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide

“…Additionally, low index contrast cavity is also possible due to the relaxed index contrast requirement in such cavities. Such a unique advantage motivates its implementation in various gain mediums and a wide wavelength range [20][21][22][23][24][25]. However, although possessing a superior optical and electrical properties than the synthesized counterpart, the achievable size and yield of exfoliated monolayer TMDC flakes is still limited [26], which makes TMDC based PCSEL challenging.…”