Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications

Abstract

A novel fluorinated organic–inorganic (O–I) hybrid sol—gel based material, named FAGPTi, is successfully synthesized and applied as a gate dielectric in flexible organic thin‐film transistors (OTFTs). The previously reported three‐arm‐shaped alkoxysilane‐functionalized amphiphilic polymer yields a stable O–I hybrid material consisting of uniformly dispersed nanoparticles in the sol‐state. Here, a fluorinated precursor is introduced into the system, making it possible to realize more stable spherical composites. This results in long‐term colloidal stability (≈1.5 years) because composite growth is strongly inhibited by the presence of fluorine groups with intrinsically strong repulsive forces. Additionally, the FAGPTi film is easily deposited via thermally annealed sol–gel reactions; the films can be successfully fabricated through the printing method, and exhibit excellent flexibility and enhanced insulating properties compared to existing materials. OTFTs with FAGPTi layers show highly stable driving characteristics under severe bending conditions (1.9% strain). Integrated logic devices are also successfully operated with these OTFTs. Additionally, it can facilely be applied to amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFT devices other than OTFT. Therefore, this synthetic strategy can provide useful insights into the production of functional O–I hybrid materials, enabling the efficient fabrication of electronic materials and devices exhibiting these properties.

Neurorobotic approaches to emulate human motor control with the integration of artificial synapse

“…GPSi sol is prepared using 3-glycidoxy propyl trimethoxysilane, propyltrimethoxysilane, titanium (IV) isopropoxide, and alkoxysilane-functionalized amphiphilic polymer (AFAP) as precursors (fig. S1) ( 41 ). The sol-gel–derived GPSi films exhibit different behavior under different annealing temperatures owing to the thermal decomposition of the propyl and glycidyl functional groups attached to the corner of the polyhedral oligomeric silsesquioxane (POSS) cage (fig.…”

Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits

“…Figure 2a shows AFM images of the prepared PI layers. The AFM image exhibited a smooth amorphous surface with a root-mean-square (RMS) roughness value of 0.212 nm, and this low RMS roughness value of less than 0.5 nm can provide a favorable environment for the growth of organic semiconducting crystals [5,19,20]. Furthermore, in order to identify the possibility of using this PI thin film as a dielectric layer for OFETs, the electrical characteristics were evaluated by fabricating a metal-insulator-metal (MIM)-structured capacitor with Al and thermally prepared PI layers (thickness: 150 nm) on Si/SiO 2 wafers.…”

Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics

“…The vital step in fabricating these synergistic organic–inorganic hybrid dielectrics is the proper cross-linking process of organic materials and MO materials at the molecular-scale level. In the early stages, hybrid dielectrics were synthesized via a simple solution process to form proper links between organics and inorganics. − Since most of the hybrid dielectrics are implemented using solution-based processes such as spin-coating or inkjet printing, they suffer from contaminant issues, which make it difficult to form pure, uniform, and dense film qualities. , …”