Printable Transfer-Free and Wafer-Size MoS<sub>2</sub>/Graphene van der Waals Heterostructures for High-Performance Photodetection

Li, Qingfeng; Cook, Brent; Gong, Maogang; Gong, Yan‐Xiao; Ewing, Dan; Casper, Matthew; Stramel, Alex; Wu, Judy

doi:10.1021/acsami.7b00912

Cited by 90 publications

(80 citation statements)

References 33 publications

(60 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure (c) shows the photocurrent sharply increased to the saturation within 84 ms (0–80%) and decreased within 30 ms (100–20%). The response time is not fast but comparable to other reported works using the similar heterostructure . The main limiting factor could arise from the cleanliness of the transferred film and the part of the film attaching to the sidewall of the waveguide.…”

supporting

confidence: 77%

“… (26 mA W −1 ), and ref. (12.3 mA W −1 ), which shows the enhanced light–matter interaction of waveguide‐integrated 2D material photodetectors. The responsivity of our device is limited mostly by the inevitable degradation of the material performance during the wet‐transfer method, which can be further improved using a transfer‐free grown MoS 2 /graphene heterostructure .…”

mentioning

confidence: 92%

See 1 more Smart Citation

Integrating Graphene/MoS₂ Heterostructure with SiN_x Waveguide for Visible Light Detection at 532 nm Wavelength

Zhang

Chen

et al. 2018

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

In this work, a silicon nitride waveguide‐integrated photodetector based on a transferred graphene/MoS2 heterostructure has been reported, where photo‐generated electron–hole pairs are produced in the CVD‐grown MoS2 monolayer and rapidly separated at the heterostructure interface, followed by electrons continuously transferring to the graphene layer induced by an effective built‐in electrical field. By tuning the back‐gate voltage to control the Fermi‐level in graphene layer, a competitive photoresponsivity of 440 mA W−1 at 532 nm is achieved. Furthermore, these exhibit a photoresponse rate with a rise time of 80 ms and a fall time of 30 ms. It is believed that the 2D heterostructure has potentials for future applications in integrated optoelectronic circuits.

show abstract

supporting

confidence: 77%

mentioning

confidence: 92%

Integrating Graphene/MoS₂ Heterostructure with SiN_x Waveguide for Visible Light Detection at 532 nm Wavelength

Zhang

Chen

et al. 2018

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…Apart from the high sensitivity to various wavelengths, the present BPQDs@PdSe 2 /Si heterojunction photodiode exhibits a relatively fast response speed, which is comparable with that of other TMDs based detectors . During the temporal response study, the pulsed optical signal was generated by 780 nm laser diode controlled by a function generator, and the transient photoresponse was recorded by an oscilloscope .…”

Section: Resultsmentioning

confidence: 72%

Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

Zeng

Lin

et al. 2018

Adv Funct Materials

337

242

View full text Add to dashboard Cite

Palladium diselenide (PdSe 2 ), a thus far scarcely studied group-10 transition metal dichalcogenide has exhibited promising potential in future optoelectronic and electronic devices due to unique structures and electrical properties. Here, the controllable synthesis of wafer-scale and homogeneous 2D PdSe 2 film is reported by a simple selenization approach. By choosing different thickness of precursor Pd layer, 2D PdSe 2 with thickness of 1.2-20 nm can be readily synthesized. Interestingly, with the increase in thickness, obvious redshift in wavenumber is revealed by Raman spectroscopy. Moreover, in accordance with density functional theory (DFT) calculation, optical absorption and ultraviolet photoemission spectroscopy (UPS) analyses confirm that the PdSe 2 exhibits an evolution from a semiconductor (monolayer) to semimetal (bulk). Further combination of the PdSe 2 layer with Si leads to a highly sensitive, fast, and broadband photodetector with a high responsivity (300.2 mA W −1 ) and specific detectivity (≈10 13 Jones). By decorating the device with black phosphorus quantum dots, the device performance can be further optimized. These results suggest the asselenized PdSe 2 is a promising material for optoelectronic application.

show abstract

“…It should be pointed out that an opposite trend is expected since MoS 2 with smaller layer numbers would be more affected by graphene. For a single‐layer of MoS 2 grown (using CVD) on graphene, the peaks for the E 1 g and A 1 g modes are shifted to ≈386 and ≈406 cm −1 , respectively, thus the spacing between the peaks is ≈20 cm −1 . It has been shown that the peaks' positions and thus the spacing between them is changed as a function of the layer number, suggesting the Raman peak shifts for TMDs are primarily from the increased number of layers in the TMD nanodomes/graphene vdW heterostructures.…”

Section: Resultsmentioning

confidence: 99%

“…The small precursor thickness typically in the range of a few nm and clean graphene surface are the key to TMD nanodome formation. On graphene directly grown on Si/SiO 2 substrates, it was found that the TMD forms a continuous layer due to the growth defect–induced rough surface of graphene . In addition, when the dipping times were increased to four times, the morphology of the MoS 2 evolves from nanodomes, mixture, and continuous layers.…”

Section: Methodsmentioning

confidence: 99%

Extraordinary Sensitivity of Surface‐Enhanced Raman Spectroscopy of Molecules on MoS₂ (WS₂) Nanodomes/Graphene van der Waals Heterostructure Substrates

Ghopry

Alamri

Goul

et al. 2019

Advanced Optical Materials

105

View full text Add to dashboard Cite

electromagnetic enhancement (EM) and chemical enhancement (CM). The EM involves the local electromagnetic field enhancement that is typically attributed to the localized surface plasmonic resonance (LSPR) of free charge carriers at the surface of the metal nanostructures induced by the incident light. The LSPR wavelength is determined primarily by the free charge carrier concentration of the metal with a minor effect of the dimension and shape of the metal nanostructures. Molecules positioned [2] close to the LSPR nanostructures experience an enhanced evanescent electromagnetic field as compared to the incident excitation. This EM enhancement directly depends on the morphology of the metal surface, the wavelength of the incident light, and the dielectric constant of the surrounding medium of the metal. The EM enhancement factor can reach over 10 8 to enable ultrasensitive SERS detection down to the single-molecule level. [4][5][6] The CM is induced by the charge transfer between the SERS substrate and molecule with an enhancement factor typically on the order of 10 1 to 10 3 . [7][8][9] The CM effect is dictated by the interface electronic structures between the analyte and substrate and can be optimized by selecting a substrate with favorable band alignment with the highestoccupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO) at the interface where the analyte (or probe molecule) bond to the substrate. Thus, tuning of the substrate electronic structure is important to an enhanced CM effect. [10] This has prompted intensive research exploring graphene-based SERS substrates considering the unique 2D atomically flat surface with delocalized π bonds, chemical inertness, biological compatibility, superior electronic and photonic properties, and the intrinsic Fermi energy at ≈4.5 eV that is compatible, as well as tunable, for CM enhancement with a large number of probe molecules. [7,8,11,12] Therefore, graphene is an excellent SERS substrate primarily due to the CM effect with the adsorbed molecules and the enhancement factor is quantitatively affected by the alignment of the probe molecule electronic structure with the Fermi level of graphene. [3,8] The EM and CM enhancement factors may be combined by adding metal nanostructures on graphene. [7,13] Since the Two-dimensional transition metal dichalcogenides (TMDs)/graphene van der Waals (vdW) heterostructures integrate the superior light-solid interaction in TMDs and charge mobility in graphene, and therefore are promising for surface-enhanced Raman spectroscopy (SERS). Herein, a novel TMD (MoS 2 and WS 2 ) nanodome/graphene vdW heterostructure SERS substrate, on which an extraordinary SERS sensitivity is achieved, is reported. Using fluorescent Rhodamine 6G (R6G) as probe molecules, the SERS sensitivity is in the range of 10 −11 to 10 −12 m on the TMD nanodomes/ graphene vdW heterostructure substrates using 532 nm Raman excitation, which is comparable to the best sensitivity reported so far using plasmonic metal nanostructures/graphene ...

show abstract

Printable Transfer-Free and Wafer-Size MoS₂/Graphene van der Waals Heterostructures for High-Performance Photodetection

Cited by 90 publications

References 33 publications

Integrating Graphene/MoS₂ Heterostructure with SiN_x Waveguide for Visible Light Detection at 532 nm Wavelength

Integrating Graphene/MoS₂ Heterostructure with SiN_x Waveguide for Visible Light Detection at 532 nm Wavelength

Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

Extraordinary Sensitivity of Surface‐Enhanced Raman Spectroscopy of Molecules on MoS₂ (WS₂) Nanodomes/Graphene van der Waals Heterostructure Substrates

Contact Info

Product

Resources

About

Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection

Cited by 90 publications

References 33 publications

Integrating Graphene/MoS2 Heterostructure with SiNx Waveguide for Visible Light Detection at 532 nm Wavelength

Integrating Graphene/MoS2 Heterostructure with SiNx Waveguide for Visible Light Detection at 532 nm Wavelength

Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

Extraordinary Sensitivity of Surface‐Enhanced Raman Spectroscopy of Molecules on MoS2 (WS2) Nanodomes/Graphene van der Waals Heterostructure Substrates

Contact Info

Product

Resources

About

Printable Transfer-Free and Wafer-Size MoS₂/Graphene van der Waals Heterostructures for High-Performance Photodetection

Integrating Graphene/MoS₂ Heterostructure with SiN_x Waveguide for Visible Light Detection at 532 nm Wavelength

Integrating Graphene/MoS₂ Heterostructure with SiN_x Waveguide for Visible Light Detection at 532 nm Wavelength

Extraordinary Sensitivity of Surface‐Enhanced Raman Spectroscopy of Molecules on MoS₂ (WS₂) Nanodomes/Graphene van der Waals Heterostructure Substrates