Principles of precursor design for vapour deposition methods

Koponen, Sara E.; Gordon, Peter G.; Barry, Seán T.

doi:10.1016/j.poly.2015.08.024

Cited by 81 publications

(82 citation statements)

References 30 publications

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“…Processes based on less volatile (compared to H 2 S gas) CH 3 SSCH 3 may generate noxious sulfur contaminants on both reactor components and as‐deposited films. Continued advances in this promising film growth methodology are contingent on the development or appropriation of new Mo‐based ALD precursors capable of reacting with H 2 S in a self‐limiting “A–B” fashion under milder conditions, with limited harmful or destructive by‐products . Moreover, developing low‐temperature ALD processes would facilitate device fabrication by optical lithography and lift‐off techniques, and by direct deposition on pre‐patterned polymeric photoresists, avoid more complex and potentially destructive etching procedures.…”

Section: Methodsmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of MoS₂ Films

et al. 2017

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Wet chemical screening reveals the very high reactivity of Mo(NMe ) with H S for the low-temperature synthesis of MoS . This observation motivated an investigation of Mo(NMe ) as a volatile precursor for the atomic layer deposition (ALD) of MoS thin films. Herein we report that Mo(NMe ) enables MoS film growth at record low temperatures-as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.

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Section: Methodsmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of MoS₂ Films

et al. 2017

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“…This together with the continuous development of CVD precursor molecules 56 will allow us to satisfy the need for more complex thin film materials and structures. …”

Section: Discussionmentioning

confidence: 99%

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

Pedersen

2016

Chem. Mater.

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Thin films of inorganic materials are essential to several technologies we take for granted in our everyday lives. They form the basis of touch screens in smart phones and the electronic components in computers. Dating back more than a century, chemical vapor deposition (CVD) is one of the most common methods to form these films. In CVD, the atoms needed for the thin film are typically supplied by a continuous flow of gaseous precursor molecules and incorporated into the film by gas phase and surface chemical reactions. The continuous demand for more precise thin film fabrication on more complex shapes at lower temperatures sets a demand for more advanced CVD methods. The development of better designed precursor molecules is one important path to evolve CVD, the other path is to evolve the way in which we do CVD. In this perspective I will describe how using time as a fourth dimension in CVD can enable fabrication of new thin film materials and material structures at lower temperatures and on more complex substrate geometries by accessing new types of CVD chemistries available in time-resolved CVD.

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“…CVD precursors are an important aspect of the CVD technology as CVD is based on chemical reactions, therefore the insight into chemical behaviour of precursors is very valuable [40]. The general requirements for CVD precursors are that they must be volatile, thermally stable during transport into the reactor and having a lower decomposition temperature.…”

Section: Precursormentioning

confidence: 99%

CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions

Imam¹

2017

Linköping Studies in Science and Technology. Dissertations

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Principles of precursor design for vapour deposition methods

Cited by 81 publications

References 30 publications

Low‐Temperature Atomic Layer Deposition of MoS₂ Films

Low‐Temperature Atomic Layer Deposition of MoS₂ Films

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions

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Principles of precursor design for vapour deposition methods

Cited by 81 publications

References 30 publications

Low‐Temperature Atomic Layer Deposition of MoS2 Films

Low‐Temperature Atomic Layer Deposition of MoS2 Films

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions

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Product

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Low‐Temperature Atomic Layer Deposition of MoS₂ Films

Low‐Temperature Atomic Layer Deposition of MoS₂ Films