Pressure tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI

VanGennep, Derrick; Maiti, Saurabh; Graf, David; Tozer, Stan; Martin, C.; Berger, H.; Maslov, Dmitrii L.; Hamlin, J. J.

doi:10.1088/0953-8984/26/34/342202

Cited by 23 publications

(31 citation statements)

References 20 publications

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“…Furthermore, we have used angle-dependent measurements to resolve the 3D Fermi surface. (2) A topological transition of the FS was also observed in BiTeI, but the relative position of the Fermi level and the band-crossing point were tuned by pressure, which modifies the band structure [38]. Very recently we have become aware of similar work by Ye et al [39].…”

Section: Discussionmentioning

confidence: 88%

Observation of topological transition of Fermi surface from a spindle torus to a torus in bulk Rashba spin-split BiTeCl

et al. 2015

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The recently observed large Rashba-type spin splitting in the BiTeX(X=I,Br,Cl) bulk states enables observation of the transition in Fermi surface topology from spindle torus to torus with varying the carrier density and offers an ideal platform for achieving practical spintronic applications and realizing nontrivial phenomena such as topological superconductivity and Majorana fermions. Here we use Shubnikov-de Haas oscillations to investigate the electronic structure of the bulk conduction band of BiTeCl single crystals with different carrier densities. We observe the topological transition of the Fermi surface (FS) from a spindle torus to a torus. The Landau-level fan diagram reveals the expected nontrivial π Berry phase for both the inner and outer FSs. Angle-dependent oscillation measurements reveal three-dimensional FS topology when the Fermi level lies in the vicinity of the Dirac point. All the observations are consistent with large Rashba spin-orbit splitting in the bulk conduction band. The recently observed large Rashba-type spin splitting in the BiTeX(X = I, Br, Cl) bulk states enables observation of the transition in Fermi surface topology from spindle torus to torus with varying the carrier density and offers an ideal platform for achieving practical spintronic applications and realizing nontrivial phenomena such as topological superconductivity and Majorana fermions. Here we use Shubnikov-de Haas oscillations to investigate the electronic structure of the bulk conduction band of BiTeCl single crystals with different carrier densities. We observe the topological transition of the Fermi surface (FS) from a spindle torus to a torus. The Landau-level fan diagram reveals the expected nontrivial π Berry phase for both the inner and outer FSs. Angle-dependent oscillation measurements reveal three-dimensional FS topology when the Fermi level lies in the vicinity of the Dirac point. All the observations are consistent with large Rashba spin-orbit splitting in the bulk conduction band.

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Section: Discussionmentioning

confidence: 88%

Observation of topological transition of Fermi surface from a spindle torus to a torus in bulk Rashba spin-split BiTeCl

et al. 2015

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“…1(c)], which can be measured from Shubnikov-de Haas oscillations [37] to support the TPT. This maximum in |E F | happens because the density of states near the top valence band diminishes as the band dispersion becomes linear [29], pushing the Fermi level away from the top valence band to conserve the phase space for the holes.…”

mentioning

confidence: 70%

Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions inPb1−xSnxSe

Guan

et al. 2014

Phys. Rev. Lett.

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The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase transitions in Pb1−xSnxSe (x = 0.00, 0.15, and 0.23). The results of infrared measurements as a function of pressure indicate the closing and the reopening of the band gap as well as a maximum in the free carrier spectral weight. The enhanced density of states near the band gap in the topological phase give rise to a steep interband absorption edge. The change of density of states also yields a maximum in the pressure dependence of the Fermi level. Thus our conclusive results provide a consistent picture of pressure-induced topological phase transitions and highlight the bulk origin of the novel properties in topological insulators.

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“…Above this pressure, a quicker increase in resistivity is found, which can be attributed to the creation of defects, precursors of the phase transition above 6-7 GPa as observed in XRD and RS measurements. The pressure increase of the resistivity in BiTeBr at low pressure contrasts with the decrease reported for the resistivity of relatively highly doped BiTeI samples at room temperature up to 3 GPa [55,56]. Before explaining the behavior of resistivity with increasing pressure in BiTeBr we will analyze first the pressure dependence of the Seebeck coefficient and of the electron concentration and mobility in our samples.…”

Section: Transport Measurements Under Pressurementioning

confidence: 90%

Structural, vibrational, and electrical study of compressed BiTeBr

et al. 2016

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Compresed BiTeBr has been studied from a joint experimental and theoretical perspective. Room-temperature x-ray diffraction, Raman scattering, and transport measurements at high pressures have been performed in this layered semiconductor and interpreted with the help of ab initio calculations. A reversible first-order phase transition has been observed above 6-7 GPa, but changes in structural, vibrational, and electrical properties have also been noted near 2 GPa. Structural and vibrational changes are likely due to the hardening of interlayer forces rather than to a second-order isostructural phase transition while electrical changes are mainly attributed to changes in the electron mobility. The possibility of a pressure-induced electronic topological transition and of a pressure-induced quantum topological phase transition in BiTeBr and other bismuth tellurohalides, like BiTeI, is also discussed.

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Pressure tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI

Cited by 23 publications

References 20 publications

Observation of topological transition of Fermi surface from a spindle torus to a torus in bulk Rashba spin-split BiTeCl

Observation of topological transition of Fermi surface from a spindle torus to a torus in bulk Rashba spin-split BiTeCl

Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions inPb1−xSnxSe

Structural, vibrational, and electrical study of compressed BiTeBr

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