“…The crystalline structure and electrical configuration of TMDs can be effectively manipulated by the internal and external stimuli, such as temperature, pressure, light, electric field, magnetic field, and so forth. ,− Among these approaches, high pressure has been proven as a clean and maneuverable manner, giving rise to plenteous novel physical phenomena, including the pressure-induced structural transition, amorphization, metallization, and superconductivity. ,− Despite the fact that tremendous efforts have been devoted to individual molybdenum-based and tungsten-based TMDs, only one available high-pressure investigation on the structural stability and electrical transport behaviors for ternary Janus TMD has been reported to date. ,− ,− , Bera et al studied the high-pressure structural, vibrational, and electronic properties of MoSSe up to 30.0 GPa using a diamond anvil cell (DAC) by means of synchrotron X-ray diffraction, Raman spectroscopy, and first-principles theoretical calculations . The authors revealed that MoSSe experienced a low-pressure phase transition at ∼3.0 GPa, followed by an isostructural phase transition (IPT) from the 2 H c ’ phase to the mixture of the 2 H c ’ and 2 H a ’ phases at ∼10.8 GPa triggered by the layer sliding.…”