Pressure-tuned InGaAsSb∕AlGaAsSb diode laser with 700nm tuning range

Adamiec, P.; Salhi, A.; Bohdan, R.; Bercha, Artem; Dybała, F.; Trzeciakowski, Witold; Rouillard, Y.; Joullié, A.

doi:10.1063/1.1815069

Cited by 28 publications

(17 citation statements)

References 14 publications

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“…6 and the threshold currents decreased (due to reduced Auger recombination at high pressure). The most spectacular tuning was achieved for a 2400 nm InGaAsSb/AlGaAsSb laser diode [9] obtained from our collaborators from Montpellier University (Fig. 7).…”

Section: Resultsmentioning

confidence: 99%

Pressure and temperature tuning of laser diodes

Trzeciakowski

Bercha

Dybała

et al. 2006

Physica Status Solidi (b)

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Pressure and temperature change the bandgap of III -V semiconductors and therefore they shift the gain spectrum of laser diodes. With 20 kbar pressure (achievable in a liquid pressure cell) we can increase the energy of the laser emission by about 200 meV for lasers grown on GaAs, InP, or GaSb. The main physical limitation of pressure tuning for shorter wavelengths (i.e. between 600 and 800 nm) is the reduction of indirect gap (Γ -X) in the barriers and claddings of the laser structure, leading to strong increase of leakage and threshold currents. In this wavelength range temperature tuning seems more practical. Cooling down the laser from room temperature (300 K) to about 100 K we should be able to increase the emission energy by about 80 meV. The combination of pressure/temperature tuning with tuning by external grating turned out to combine the merits of both methods: wide spectral range, narrow linewidth, stable emission wavelength. The method seems promising although several issues still have to be addressed like the reliability of lasers and pressure cells after multiple pressure cycles, stability of coupling between the laser diode and fiber under high pressure etc.

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Section: Resultsmentioning

confidence: 99%

Pressure and temperature tuning of laser diodes

Trzeciakowski

Bercha

Dybała

et al. 2006

Physica Status Solidi (b)

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“…Although the telecommunications diode lasers are limited in wavelength selection, several recent technologies offer methods for sensitive trace gas detection using such lines. These include tunable optical parametric oscillators, difference frequency generation (Richter et al, 2002) and, recently, red-shifting the emission wavelength of near-IR lasers via high pressures (Adamiec et al, 2004). In terms of the CH 2 I 2 photochemistry in the presence of ozone, it may be possible to monitor the CH 2 I 2 , HI and IO simultaneously in a chamber type experiment as suggested by Mäkelä et al (2002).…”

Section: Discussionmentioning

confidence: 99%

The quantitative infrared and NIR spectrum of CH<sub>2</sub>I<sub>2</sub> vapor: vibrational assignments and potential for atmospheric monitoring

2006

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Abstract. Diiodomethane (CH 2 I 2 ) has recently become a molecule of significant atmospheric interest as it can contribute to coastal IO formation. As part of the PNNL database of gas-phase infrared spectra, the quantitative absorption spectrum of CH 2 I 2 has been acquired at 0.1 cm −1 resolution. Two strong b 2 symmetry A-type bands at 584 and 1114 cm −1 are observed, but are not resolved when broadened to 760 Torr with nitrogen and appear as B-type. In contrast, the b 1 symmetry C-type bands near 5953, 4426 and 3073 cm −1 are resolved with rotational structure, including Q-branches with widths ≤1 cm −1 . The quantitative infrared and near-infrared vapor-phase spectra (600-10 000 cm −1 ) are reported for the first time. Some bands are discussed in terms of their potential for atmospheric monitoring and theoretical detection limits on a selected basis. FT-Raman spectra and ab initio calculations are used to complete vibrational assignments in the C 2v point group.

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“…3͒ which show a strong increase in I th above 8 kbar. 12 At these higher pressures E g approaches ⌬ so and the CHSH process becomes resonant. An increase in inter-valence band absorption may also contribute to this strong increase in the threshold current.…”

Section: Figmentioning

confidence: 99%

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm

O’Brien

Sweeney

Adams

et al. 2006

Applied Physics Letters

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The temperature dependence of the threshold current of InGaAsSb/ AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T 0 values. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2243973͔ Diode lasers emitting in the midinfrared ͑MIR͒ are important for the development of highly sensitive gas detection systems. Many gases of interest have strong absorption lines in the 2 -5 m region, where the InGaAsSb material system is proving successful. 1,2 Threshold current densities as low as 58 A cm −2 per quantum well ͑QW͒ for devices emitting at 2.24 m and 66 A cm −2 per QW at a wavelength of 2.26 m have been achieved, 3,4 while continuous-wave maximum output powers of 500 mW near 2.3 m have been recorded. 5 Previously, investigations of the variation in spontaneous emission characteristics with temperature have successfully been used to examine and optimize the properties of nearinfrared semiconductor lasers for optical fiber communications. 6,7 The application of these techniques to midinfrared lasers will aid the development of these particular devices and further the overall understanding of this material system. In this letter, we investigate the carrier recombination processes occurring in 2.37 m InGaAsSb/ AlGaAsSb lasers, over a wide temperature range from 80 to 300 K and using high hydrostatic pressures up to 8 kbar. From these data we identify the dominant recombination paths constituting the threshold current of the devices and the extent to which each process influences their temperature dependence.The triple quantum well lasers under investigation were grown by solid-source molecular beam epitaxy on GaSb substrates. Two 35 nm Al 0.25 Ga 0.75 As 0.02 Sb 0.98 barriers separate the 10 nm thick, 1.4% compressively strained In 0.35 Ga 0.65 As 0.11 Sb 0.89 QWs, providing a type I band alignment at the QW/barrier interface. Standard photolithography techniques were used to fabricate lasers with a 100 m-wide metal contact stripe. The p and n contacts consist of Pt/ Au and a thick gold layer deposited, respectively. 8 Fabry-Pérot lasers were measured as-cleaved with a cavity length of 1 mm.In order to collect the spontaneous emission from the device, a 100 m diameter circular window was milled in the n contact, using a focused ion beam. This enables one to collect pure spontaneous emission which has been unaffected by gain or loss along the cavity. Further details of the technique can be found elsewhere. 6 The emitted spontaneous emission was collected using a chalcogenide ͑A...

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Pressure-tuned InGaAsSb∕AlGaAsSb diode laser with 700nm tuning range

Cited by 28 publications

References 14 publications

Pressure and temperature tuning of laser diodes

Pressure and temperature tuning of laser diodes

The quantitative infrared and NIR spectrum of CH<sub>2</sub>I<sub>2</sub> vapor: vibrational assignments and potential for atmospheric monitoring

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm

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Pressure-tuned InGaAsSb∕AlGaAsSb diode laser with 700nm tuning range

Cited by 28 publications

References 14 publications

Pressure and temperature tuning of laser diodes

Pressure and temperature tuning of laser diodes

The quantitative infrared and NIR spectrum of CH&lt;sub&gt;2&lt;/sub&gt;I&lt;sub&gt;2&lt;/sub&gt; vapor: vibrational assignments and potential for atmospheric monitoring

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm

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The quantitative infrared and NIR spectrum of CH<sub>2</sub>I<sub>2</sub> vapor: vibrational assignments and potential for atmospheric monitoring