Pressure-induced superconductivity in 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ag</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Bi</mml:mi><mml:mrow><mml:mn>2</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>

He, Ting; Yang, Xiaofan; Terao, Takahiro; Uchiyama, Takaki; Ueno, Teppei; Kobayashi, Kaya; Akimitsu, Jun; Miyazaki, Takafumi; Nishioka, Takumi; Kawasaki, Koji; Hayashi, Kouichi; Happo, Naohisa; Yamaoka, H.; Ishii, Hirofumi; Liao, Yen Fa; Ota, Hiromi; Goto, Hidenori; Kubozono, Yoshihiro

doi:10.1103/physrevb.97.104503

Cited by 38 publications

(30 citation statements)

References 27 publications

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“…This result suggested that the β-FeSe 0.5 Te 0.5 sample had successfully been prepared. In addition, the energy dispersive x-ray spectroscopy data also indicated the stoichiometry of FeSe 0.51(2) Te 0.49 (2) for the prepared FeSe 0.5 Te 0.5 sample. We used this sample in the preparation of the (NH 3 ) y Li x FeSe 0.5 Te 0.5 that was used throughout this study.…”

Section: Resultsmentioning

confidence: 77%

“…Recently, the pressure dependence of superconductivity in metal-doped two-dimensional (2D) layered materials has attracted much attention [1][2][3][4][5][6][7][8][9][10][11] because of the expectation that a new superconducting pairing mechanism will be developed, as well as the emergence of new superconducting phases exhibiting higher superconducting transition temperatures (T c 's) than those observed at ambient pressure. The pressure-driven high-T c phase has been extensively investigated in metal-doped FeSe [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Superconducting properties of (NH₃)_yLi_xFeSe_0.5Te_0.5 under pressure

Yang

Taguchi

et al. 2019

New J. Phys.

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We prepared two superconducting phases of (NH 3 ) y Li x FeSe 0.5 Te 0.5 , which show superconducting transition temperatures (T c 's) as high as 20.2 and 29.5 K at ambient pressure, here called the 'low-T c phase' and 'high-T c phase'. The temperature dependence of electrical resistance (R) was measured for the low-T c phase of (NH 3 ) y Li x FeSe 0.5 Te 0.5 over a pressure (p) range of 0-14 GPa, and for the high-T c phase of (NH 3 ) y Li x FeSe 0.5 Te 0.5 over 0-19 GPa, yielding double-dome superconducting T c -p phase diagrams, i.e. two superconducting phases (SC-I and SC-II) were found for both the low-T c and high-T c phases under pressure. For the low-T c phase, the maximum T c was 20.2 K at 0 GPa for SC-I, and 19.9 K at 8.98 GPa for SC-II. For the high-T c phase, the maximum T c was 33.0 K at 1.00 GPa for SC-I, and 24.0 K at 11.5-13.2 GPa for SC-II. These results imply that the maximum T c value of the high pressure phase (SC-II) does not exceed the maximum value of the SC-I, unlike what was shown in the T c -p phase diagrams of (NH 3 ) y Li x FeSe and (NH 3 ) y Cs x FeSe investigated previously. Nevertheless, the double-dome T c -p phase diagram was found in metal-doped FeSe 0.5 Te 0.5 , indicating that this feature is universal in metal-doped FeSe 1−z Te z . Moreover, no structural phase transitions were observed for either the low-T c or high-T c phases of (NH 3 ) y Li x FeSe 0.5 Te 0.5 over the wide pressure range of 0-15.3 GPa, and the T c -lattice constant (c) plots for both phases were recorded to determine the critical point separating SC-I and SC-II.

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Section: Resultsmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Superconducting properties of (NH₃)_yLi_xFeSe_0.5Te_0.5 under pressure

Yang

Taguchi

et al. 2019

New J. Phys.

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“…X‐ray fluorescence holography (XFH) is a powerful tool for investigating the local atomic configuration around a selected element emitting fluorescent X‐rays . In particular, XFH has been performed for investigating local arrangements around dopants in various materials, such as Mn‐doped Bi 2 Te 3 topological insulator and Co‐doped TiO 2 magnetic thin film, which served to obtain an atomic‐level understanding on the role of dopants.…”

Section: Introductionmentioning

confidence: 99%

Local structural analysis of In‐doped Bi₂Se₃ topological insulator using X‐ray fluorescence holography

Kawasaki

Hayashi

Yashina

et al. 2018

Surface & Interface Analysis

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We performed X‐ray fluorescence holography measurements on an In‐doped Bi2Se3 topological insulator and obtained an in‐plane atomic image in the vicinity of In. We found that atomic images at the positions of the first nearest neighbors (NNs) are very weak whereas those at the positions of the second and the third NNs are relatively strong. On the basis of the fact that In is half of the atomic number of Bi, we attributed the origin of this feature to the clustering of the In atoms in the Bi plane. We calculated the intensity of the atomic images and confirmed that the formation of In cluster results in a decrease by 30% in the first NN atomic image intensity. However, the decrease in the magnitude is not enough to explain the experimental results, suggesting another contribution such as the lattice distortions. The effect of the lattice distortion on the atomic image intensity is discussed on the basis of the simulation including the positional fluctuation of In atoms.

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“…In other words, ARH directly shows us the 3D local atomic structures which exist only around the selected dopants in a larger area. Photoelectron and X‐ray fluorescence ARH have already been practicalised and have provided rich information on the anomalies of atomic structures in various exotic materials, such as dilute magnetic semiconductors, relaxor ferroelectric materials, topological insulators and so on, which can never be obtained by other probes . The technical details and principles of X‐ray fluorescence ARH can be found in review papers …”

Section: Introductionmentioning

confidence: 99%

White Neutron Holography in Pulsed Neutron Facilities

Ohoyama

Hayashi

2018

Physica Status Solidi (b)

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Slight changes in atomic structures by doping foreign elements in materials play an important role in functionality. This article presents a review of the newly developed technique, white neutron holography, which is an effective probe for investigations of effects of doping on atomic structures, particularly for light elements. The principle and advantages of white neutron holography are explained. Observations of local structures around the dopant in B‐doped Si, Eu‐doped CaF2 and other materials have already been succeeded, meaning that white neutron holography can be applied to various fields in materials science.

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Pressure-induced superconductivity in AgxBi2−xSe3

Cited by 38 publications

References 27 publications

Superconducting properties of (NH₃)_yLi_xFeSe_0.5Te_0.5 under pressure

Superconducting properties of (NH₃)_yLi_xFeSe_0.5Te_0.5 under pressure

Local structural analysis of In‐doped Bi₂Se₃ topological insulator using X‐ray fluorescence holography

White Neutron Holography in Pulsed Neutron Facilities

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Pressure-induced superconductivity in AgxBi2−xSe3

Cited by 38 publications

References 27 publications

Superconducting properties of (NH3)yLixFeSe0.5Te0.5 under pressure

Superconducting properties of (NH3)yLixFeSe0.5Te0.5 under pressure

Local structural analysis of In‐doped Bi2Se3 topological insulator using X‐ray fluorescence holography

White Neutron Holography in Pulsed Neutron Facilities

Contact Info

Product

Resources

About

Superconducting properties of (NH₃)_yLi_xFeSe_0.5Te_0.5 under pressure

Superconducting properties of (NH₃)_yLi_xFeSe_0.5Te_0.5 under pressure

Local structural analysis of In‐doped Bi₂Se₃ topological insulator using X‐ray fluorescence holography