The high pressure−temperature (P−T) synchrotron X-ray diffraction (XRD) technique was used to detect the changes in the α phase of silicon nitride (α-Si 3 N 4 ) under varied conditions up to 8.1 GPa and 1100 K. The lattice parameters, a and c, as well as the unit-cell volume, V, of the sample at a series of P−T points were obtained from the refinement of the XRD patterns. Then, a modified high-T Birch−Murnaghan equation of state (EOS) was adopted to fit the P−V−T dataset, yielding values of the thermoelastic properties of α-Si 3 N 4 . Upon the pressure derivative of the bulk modulus, K 0 ′, fixed at 4.0, the fitting results are the ambient condition bulk modulus K 0 = 210(11) GPa, temperature derivative of the bulk modulus at constant pressure (∂K/∂T) P = −0.016(7) GPa• K −1 , and volumetric thermal expansivity α T (K −1 ) = a + bT with a = 6.24(10) × 10 −7 K −1 and b = 1.09(10) × 10 −8 K −2 . Meanwhile, the temperature-dependent linear compressibilities of the sampling crystal alone lattice axes a and c, respectively, were calculated. Furthermore, the thermal pressure approach was applied to derive the temperature derivative, (∂K/∂T) V , of the bulk modulus at a constant volume, leading to a value of −0.0095(11) GPa•K −1 . The measured ambient bulk modulus in the present study is comparable to those reported in the literature. In addition, the thermal elastic properties of α-Si 3 N 4 were compared with those of another similar ceramic material, silicon carbide (SiC), to further explore its unique mechanical characteristics.