2006
DOI: 10.1002/pssb.200672549
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Pressure‐induced phase transition in Co‐doped ZnO

Abstract: . Ks, 64.70.Kb, 81.05.Dz High-pressure X-ray diffraction studies of Co x Zn 1-x O (x = 0, 0.05, 0.10) were carried out with a synchrotron radiation source. The crystal parameters for three samples under pressure were refined by the Rietveld method. The bulk moduli for Co x Zn 1-x O (x = 0, 0.05, 0.10) were determined by Birch's equation of state to be 144.9 ± 0.6, 143.4 ± 4.2, and 138.5 ± 1.9 GPa, and also the transition pressure from the wurtzite structure to the rocksalt structure were determined to be 8.… Show more

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Cited by 14 publications
(11 citation statements)
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“…According to previous works on Zn 1– x Co x O thin films and microcrystalline powders, the W- to RS-phase transition in bulk materials and thin films occurs at lower pressures for larger Co content. It decreases from 9 GPa in pure ZnO to 6 GPa in Zn 0.7 Co 0.3 O.…”
Section: Structural and Compositional Characterization: Electron Micr...supporting
confidence: 87%
See 1 more Smart Citation
“…According to previous works on Zn 1– x Co x O thin films and microcrystalline powders, the W- to RS-phase transition in bulk materials and thin films occurs at lower pressures for larger Co content. It decreases from 9 GPa in pure ZnO to 6 GPa in Zn 0.7 Co 0.3 O.…”
Section: Structural and Compositional Characterization: Electron Micr...supporting
confidence: 87%
“…18,33−36 High-pressure techniques are well suited to investigate the electronic structure of semiconductor materials 37 already been used to study the electronic structure of Zn 1−x Co x O NPs, 38 thin films, 35,39−41 and single crystals. 4,42 High pressure was also crucial to elucidate electronic structure effects related to quantum confinement in quantum dots. 43 The present work investigates the effect of pressure on the structure and electronic properties of Zn 1−x Co x O NPs.…”
mentioning
confidence: 99%
“…Recently, it has been shown that the pressure of the wurtzite-to-rock-salt transformation decreases for Co-and Mn-doped ZnO as compared to pure ZnO [7][8][9]. The high pressure -high temperature (HPHT) synthesis of ZnO-rich rs solid solutions Mn 0.25 Zn 0.75 O and Co 0.27 Zn 0.73 O in the form of thin films has been reported [8,9], however, in the case of bulk samples the situation may be different.…”
Section: Introductionmentioning
confidence: 99%
“…This effect should be especially pronounced in diamond-like direct-bandgap semiconductors of n-А 3 В 5 and n-А 2 В 4 С 5 2 families, which is caused by, alongside with a χ(Р) dependence, a noticeable m n (P) dependence. As has been mentioned above, a sharp decrease of the resistivity by some orders of magnitude is observed, which testifies to the presence of the phase transition from diamond to NaCltype structure at P > 9 GPa [5,6]. According to formulas derived in the framework of the 'heterophase structureeffective medium' model [12], the relative volume fractions of the phases in the vicinity of the critical region of the polymorphous transformation (Fig.…”
mentioning
confidence: 68%