Pressure-induced insulator to metal transition of mixed valence compound Ce(O,F)SbS2

Matsumoto, Ryo; Nagao, Masanori; Ochi, Masayuki; Tanaka, Hiromi; Hara, Hiroshi; Adachi, Shintaro; Nakamura, Kazuki; Murakami, Ryo; Yamamoto, S.; Irifune, Tetsuo; Takeya, Hiroyuki; Tanaka, Isao; Kuroki, Kazuhiko; Takano, Yoshihiko

doi:10.1063/1.5079765

Cited by 9 publications

(8 citation statements)

References 47 publications

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“…This explains why it has been implemented in various codes 75,77,78,167,181,[247][248][249][250] and used for numerous applications. Examples are the search for efficient thermoelectric materials, [251][252][253][254][255][256][257][258][259][260][261][262][263][264] topological insulators, 254, or materials for photovoltaics. 23,[286][287][288] The mBJLDA potential has also been used for the screening of materials or in relation to machine learning techniques 28,289,290 (see Refs.…”

Section: Discussionmentioning

confidence: 99%

Semilocal exchange-correlation potentials for solid-state calculations: Current status and future directions

Tran

Doumont

Kalantari

et al. 2019

Journal of Applied Physics

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Kohn-Sham (KS) density functional theory (DFT) is a very efficient method for calculating various properties of solids as, for instance, the total energy, the electron density, or the electronic band structure. The KS-DFT method leads to rather fast calculations, however the accuracy depends crucially on the chosen approximation for the exchange and correlation (xc) functional E xc and/or potential v xc . Here, an overview of xc methods to calculate the electronic band structure is given, with the focus on the so-called semilocal methods that are the fastest in KS-DFT and allow to treat systems containing up to thousands of atoms. Among them, there is the modified Becke-Johnson potential that is widely used to calculate the fundamental band gap of semiconductors and insulators. The accuracy for other properties like the magnetic moment or the electron density, that are also determined directly by v xc , is also discussed.

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Section: Discussionmentioning

confidence: 99%

Semilocal exchange-correlation potentials for solid-state calculations: Current status and future directions

Tran

Doumont

Kalantari

et al. 2019

Journal of Applied Physics

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“…Layered BiS 2 -based superconductors, represented as La(O,F)BiS 2 [1], have opened various materials science properties, such as their anomalous upper critical field [2,3], thermoelectric performance [4][5][6], topological features [7], and superconductivity on highentropy alloys [8], up for further investigation. Among them, the performance of the material at high-pressures has attracted considerable attention.…”

Section: Introductionmentioning

confidence: 99%

Electrical Transport Measurements on Layered La(O,F)BiS2 under Extremely High Pressure

et al. 2022

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Layered La(O,F)BiS2 exhibits drastic enhancements of the superconducting transition temperature (Tc) under high pressure among the BiS2-based superconducting family. However, the high-pressure application beyond a high-Tc phase of the monoclinic structure has not been conducted. In this study, the electrical transport properties in La(O,F)BiS2 single crystal are measured under high pressures up to 83 GPa. An insulating phase without superconductivity is observed under a higher-pressure region above 16 GPa. Moreover, the sample exhibits metallicity and superconductivity above 60 GPa. The newly observed hidden semiconducting phase and reentrant superconductivity have attracted much attention in BiS2-based compounds.

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“…High-pressure techniques strongly support a design of functional materials, for example, hydrogen-storage alloys [1], thermoelectric materials [2][3][4], superconductors [5][6][7][8][9][10], and so on [11].…”

Section: Introductionmentioning

confidence: 99%

Electrical transport measurements for superconducting sulfur hydrides using boron-doped diamond electrodes on beveled diamond anvil

Matsumoto

Einaga

Adachi

et al. 2020

Supercond. Sci. Technol.

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A diamond anvil cell (DAC) has become an effective tool for investigating physical phenomena that occur at extremely high pressure, such as high-transition temperature superconductivity. Electrical transport measurements, which are used to characterize one of the most important properties of superconducting materials, are difficult to perform using conventional DACs. The available sample space in conventional DACs is very small and there is an added risk of electrode deformation under extreme operating conditions. To overcome these limitations, we herein report the fabrication of a boron-doped diamond microelectrode and undoped diamond insulation on a beveled culet surface of a diamond anvil. Using the newly developed DAC, we have performed in-situ electrical transport measurements on sulfur hydride H2S, which is a well-known precursor of the pressure-induced, high-transition temperature superconducting sulfur hydride, H3S. These measurements conducted under high pressures up to 192 GPa, indicated the presence of a multi-step superconducting transition, which we have attributed to elemental sulfur and possibly HS2.

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Pressure-induced insulator to metal transition of mixed valence compound Ce(O,F)SbS2

Cited by 9 publications

References 47 publications

Semilocal exchange-correlation potentials for solid-state calculations: Current status and future directions

Semilocal exchange-correlation potentials for solid-state calculations: Current status and future directions

Electrical Transport Measurements on Layered La(O,F)BiS2 under Extremely High Pressure

Electrical transport measurements for superconducting sulfur hydrides using boron-doped diamond electrodes on beveled diamond anvil

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