Pressure-inducedΓ-Xtransition in (Ga,In)P

Abstract

Transport properties of (Ga, In)P are reported to 6 GPa pressure. Room-temperature Hall and resistivity measurements show a transition in mobility from Ito X-band conduction and a corresponding maximum in the Hall constant at 2.8 GPa. Room-temperature photoluminescence was measured to determine the increase in the I -band gap with pressure at a rate of 0.096+0.005 eV/GPa. A two-band model was used to explain the transport measurements.

Pressure dependence of optical transitions in ordered GaP/InP superlattices

“…This ⌫→X crossover has been observed both in disordered and in ordered Ga x In 1Ϫx P alloys. 3,11,13,14 In pure InP we find that the ⌫→X crossover occurs at 103 kbar, in good agreement with the extrapolated value of 104 kbar obtained by Müller et al 15 from photoluminescence measurements. When GaP is added to InP to form the Ga x In 1Ϫx P alloy, the X-like conduction band is lowered in energy with respect to the CBM ͑it becomes the CBM for xу0.7 at zero pressure 14 ͒.…”

Acoustic and elastic properties of silicone oil under high pressure

“…4,5 Previously, PDMS has been used as a PTM to minimize the pressure gradient across the sample chamber in X-ray diffraction (XRD), Raman scattering, Brillouin scattering, X-ray absorption and Photoluminescence studies. [9][10][11][12][13][14][15][16][17][18] Because nonhydrostatic conditions have impact on structural or electronic transitions of matter under high pressure, various PTMs have been investigated and their hydrostaticity is focused on, such as silicone oil. [6][7][8] For example, Piermarini et al studied the hydrostatic limits in silicone oil as well as other liquid and solid PTMs.…”