Pressure-induced enhancement and retainability of optoelectronic properties of NiPS<sub>3</sub>

Fang, Sixue; Li, Quanjun; Li, Zonglun; Dong, Qing; Jing, Xiaoling; Li, Chenyi; Li, Haiyan; Liu, Bo; Liu, Ran; Liu, Bingbing

doi:10.1080/21663831.2022.2130717

Cited by 13 publications

(15 citation statements)

References 49 publications

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“…In contrast, it has been found that pressure engineering can also enhance the photocurrent response in some perovskite-type compounds, such as MASnI 3 and NiPS 3 . 29,30 The resistivity of these compounds will be significantly reduced after pressure treatment, so the pronounced increase in carrier mobility is the main reason for the enhancement of their photocurrent. However, this explanation is not applicable to Cr 2 Se 3 as its resistivity increases after decompression.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Liu

Jiang

et al. 2023

Chem. Mater.

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Materials capable of switching in multiple states under external stimuli have garnered extensive attention in the field of memory devices and switches. The coupling of various switching properties is of paramount significance to the creation of multifunctional devices. Herein, we report the pressure-induced multiswitching behaviors of both the structural and physical properties in two chromium selenides, CrSe and Cr2Se3. Comprehensive high-pressure characterizations reveal the collaborative occurrence of pressure-induced structural phase transitions, spin-crossover, metallization, and n–p conduction-type switching in both compounds. Upon compression, Cr2Se3 demonstrates an unexpected increase in resistivity and band gap, which is associated with the disordering of the self-intercalation structure. Of particular interest is that due to the dimensional differences in crystal structures, the photoelectric properties of the two decompressed samples are inversely regulated after pressure treatment. Notably, the band gap of Cr2Se3 is pronouncedly broadened after decompression due to the partially irreversible disorder in the structure. These results demonstrate that pressure engineering can regulate the photoelectric properties of materials effectively and flexibly, serving as a potential foundation for fabricating innovative pressure-responsive multifunctional devices.

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Section: ■ Results and Discussionmentioning

confidence: 99%

“…29 Furthermore, NiPS 3 -and Eu 3+ -doped CsPbCl 3 exhibit 2 orders of magnitude and 2-fold enhancement in their photocurrent responses after decompression, respectively. 30,31 These findings pave a practical pathway for designing more efficient photovoltaic and photoelectric materials via pressure treatments.…”

Section: ■ Introductionmentioning

confidence: 89%

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Liu

Jiang

et al. 2023

Chem. Mater.

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“…In addition to the significantly enhanced photocurrent by almost five orders of magnitude, extending the spectral response range to the optical communication waveband (1650 nm) was also observed in NiPS 3 . [ 36 ] Moreover, partial photocurrents can be retained after decompression to ambient conditions, and the photocurrent harvesting is two orders of magnitude greater than that before high‐pressure treatment. [ 36 ]…”

Section: Pressure Engineering For Extending the Spectral Response Rangementioning

confidence: 99%

“…[ 36 ] Moreover, partial photocurrents can be retained after decompression to ambient conditions, and the photocurrent harvesting is two orders of magnitude greater than that before high‐pressure treatment. [ 36 ]…”

Section: Pressure Engineering For Extending the Spectral Response Rangementioning

confidence: 99%

“…[28][29][30][31][32] Some investigations have even demonstrated the feasibility of pressure-regulated photoelectric properties in functional materials for practical applications. [33][34][35][36] Such a 2.8-nm-wide edge-closed graphene nanoribbon was obtained by irreversibly squashing carbon nanotubes via high-pressure and thermal treatment, and superb field-effect properties were obtained. [33] These findings reveal that pressure possesses great potential for novel photoelectric material synthesis, optimization, and further practical applications.…”

Section: Introductionmentioning

confidence: 99%

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Photoelectric Properties of Functional Materials under High Pressure

Liu

et al. 2023

Advanced Physics Research

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The past decade has seen enormous interest in emerging photodetectors owing to their diverse applications in daily life and military fields. Tremendous progress has been made in the exploration and optimization of photoelectric materials. In particular, high pressure has been successfully adopted as a significant means to tune photoelectric properties. The remarkable enhancement in photocurrent by several orders of magnitude, induces inverse photoconductivity, and even extends the spectral response range, which was achieved by using the pressure strategy in several functional materials. In this prospective article, recent advances in pressure-regulated photoelectric properties of various functional materials are briefly elaborated on. In addition, the current challenges and possible research directions are discussed. It is sincerely hoped to inspire more new endeavors to promote further investigation of the photoelectric properties of functional materials under high pressure and provide more insights into exploring and optimizing novel photoelectric materials.

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Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy‐Efficient Neuromorphic Hardware

Weng,

Zheng,

et al. 2023

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Designing reliable and energy‐efficient memristors for artificial synaptic arrays in neuromorphic computing beyond von Neumann architecture remains a challenge. Here, memristors based on emerging layered nickel phosphorus trisulfide (NiPS3) are reported that exhibit several favorable characteristics, including uniform bipolar nonvolatile switching with small operating voltage (<1 V), fast switching speed (< 20 ns), high On/Off ratio (>102), and the ability to achieve programmable multilevel resistance states. Through direct experimental evidence using transmission electron microscopy and energy dispersive X‐ray spectroscopy, it is revealed that the resistive switching mechanism in the Ti/NiPS3/Au device is related to the formation and dissolution of Ti conductive filaments. Intriguingly, further investigation into the microstructural and chemical properties of NiPS3 suggests that the penetration of Ti ions is accompanied by the drift of phosphorus‐sulfur ions, leading to induced P/S vacancies that facilitate the formation of conductive filaments. Furthermore, it is demonstrated that the memristor, when operating in quasi‐reset mode, effectively emulates long‐term synaptic weight plasticity. By utilizing a crossbar array, multipattern memorization and multiply‐and‐accumulate (MAC) operations are successfully implemented. Moreover, owing to the highly linear and symmetric multiple conductance states, a high pattern recognition accuracy of ≈96.4% is demonstrated in artificial neural network simulation for neuromorphic systems.

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Pressure-induced enhancement and retainability of optoelectronic properties of NiPS₃

Cited by 13 publications

References 49 publications

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Photoelectric Properties of Functional Materials under High Pressure

Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy‐Efficient Neuromorphic Hardware

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Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3

Cited by 13 publications

References 49 publications

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Photoelectric Properties of Functional Materials under High Pressure

Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy‐Efficient Neuromorphic Hardware

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Product

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Pressure-induced enhancement and retainability of optoelectronic properties of NiPS₃