Pressure-induced electronic topological transitions in the charge-density-wave material In4Se3

Phase transition and electronic properties of Co–As binary compounds at high pressure

“…It is worth noting that the electronic topological transition has a signicant impact on the corresponding physical and chemical properties and can occur when the Fermi surface of the electronic system is changed by doping, high pressure, temperature or other external reagents. [44][45][46] Therefore, we have checked the potential pressure-induced electronic topological transition in Co-As system. Attractively, the electronic The electron localization function (ELF), 47 as depicted in Fig.…”