2014
DOI: 10.1021/jp408666q
|View full text |Cite
|
Sign up to set email alerts
|

Pressure-Induced Changes on The Electronic Structure and Electron Topology in the Direct FCC → SH Transformation of Silicon

Abstract: X-ray diffraction experiments at 80 K show that when silicon is compressed under hydrostatic conditions the intermediate high-pressure phases are bypassed leading to a direct transformation to the simple hexagonal structure at 17 GPa. A maximum entropy analysis of the diffraction patterns reveals dramatic alterations in the valence electron distribution from tetrahedral covalent bonding to localization in the interstitial sites and along the one-dimensional silicon atom chain running along adjacent hexagonal l… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
19
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 21 publications
(19 citation statements)
references
References 35 publications
(65 reference statements)
0
19
0
Order By: Relevance
“…Besides the information on atomic arrangement, electron density analysis under pressure has recently been performed [101,102,367,368]. For instance, the change in electron density distributions has been monitored across a spin transition of Fe 2+ in (Mg,Fe)O (Fig.…”
Section: Hp Crystallographymentioning
confidence: 99%
“…Besides the information on atomic arrangement, electron density analysis under pressure has recently been performed [101,102,367,368]. For instance, the change in electron density distributions has been monitored across a spin transition of Fe 2+ in (Mg,Fe)O (Fig.…”
Section: Hp Crystallographymentioning
confidence: 99%
“…When compressed at room temperature, Si-I undergoes a well-characterized sequence of phase transitions first to the metallic β-tin structure (Si-II) at 11 GPa 55 , followed by a transition at 13 GPa to the Imma structure (Si-XI) 56 , which transforms to a simple hexagonal phase (Si-V) at 16 GPa 57 . Therefore, it is surprising that when Si was compressed at low temperature (80 K) in a hydrostatic medium 58 , a direct transformation from the Si-I to Si-V structure was observed at 17 GPa, bypassing the two thermodynamically stable intermediate phases Si-II and Si-XI. The phase transition is clearly kinetically controlled.…”
Section: Applications On Unsolved Systemsmentioning
confidence: 99%
“…Si and Ge transform to the β‐Sn modification at room temperature and pressures around 10 GPa . At low temperatures silicon transforms into the sh modification ,. For Sn the transition from the gray ( cd ) to the white tin ( β‐Sn ) occurs at the external pressure around 1 GPa at low temperatures, or even at ambient pressure and 13 °C…”
Section: Introductionmentioning
confidence: 99%