Pressure effects on aluminium oxidation kinetics using X-ray photoelectron spectroscopy and parallel factor analysis

Do, T.; McIntyre, N. S.

doi:10.1016/s0039-6028(99)00836-5

Cited by 24 publications

(16 citation statements)

References 34 publications

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“…The irradiations were carried out at the MEIS facility 11 2 . Following irradiation, the specimens were stored in a desiccator containing silica gel before examination by microscopy.…”

Section: Methodsmentioning

confidence: 99%

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Detachment of alumina films from aluminium by 100 keV H⁺ ions

Liu

Alexander

Королева

et al. 2002

Surface & Interface Analysis

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Irradiation of aluminium covered by anodic oxide films 3-14 nm thick using 100 keV H + ions is shown to result in detachment of the oxide film. A dose of 6.6 × 10 16 H + ions cm −2 on a 6.5 nm thick film causes the removal of large pieces of oxide with dimensions at least 15 µm. Atomic force microscopy analysis shows that the location of the failure is within ∼1 nm of the metal/oxide interface. The large aspect ratio (width to thickness) of the detached pieces is thus ∼2000 : 1 and indicates that there is a disruption of the oxide bonding over large areas. The bombardment also results in the formation of blisters with diameters up to several hundred nanometres in the oxide, accompanied by shallow depressions, ∼5 nm deep in the underlying metal. The detachment is suggested to be associated with either condensation of vacancies generated in the metal by the H + ions or accumulation of hydrogen atoms deposited in the metal by the ion beam in the region of the metal/oxide interface. Although the beam energy and dose were expected to cause some disruption in the implanted material, the complete detachment of large areas of oxide was not anticipated. In fact, this appears to be the first time such gross detachment of an anodic film by H + ion irradiation has been reported.

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“…The irradiations were carried out at the MEIS facility 11 2 . Following irradiation, the specimens were stored in a desiccator containing silica gel before examination by microscopy.…”

Section: Methodsmentioning

confidence: 99%

“…1,2 The alumina normally adheres strongly to the metal, being, for example, a key component of adhesive-bonded joints. 3 However, there are some reports of detachment of alumina films.…”

Section: Introductionmentioning

confidence: 99%

Detachment of alumina films from aluminium by 100 keV H⁺ ions

Liu

Alexander

Королева

et al. 2002

Surface & Interface Analysis

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“…The XPS spectra were obtained using a Surface Science Laboratories SSX-100 spectrometer equipped with a Kinetic Energy (eV) 15 The growth of oxide on clean aluminium surfaces was monitored by following the changes in intensity of the XPS Al 2p and O 1s photoelectron lines at binding energies of 72.87 š 0.05 (i.e. the metallic peak) and 532.30 š 0.05 eV, respectively.…”

Section: Methodsmentioning

confidence: 99%

Effects of temperature and Ar⁺ ion bombardment on the initial oxidation stages of polycrystalline aluminium with water vapour

McIntyre

2001

Surface & Interface Analysis

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The initial stages of oxide formation following the interaction of water vapour with polycrystalline aluminium surfaces have been studied using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Attenuation of the electron signal from the metallic substrate has been used to follow the oxidation kinetics of aluminium as a function of energy and dose of Ar + ion bombardment and temperature. The effects of energy and doses of Ar + ion bombardment on oxidation kinetics have been examined in the energy range 1-5 keV and ion dose ranging from 1.3 × 10 16 to 3.8 × 10 17 ions cm −2 . Although the increase in energy of Ar + ion bombardment slightly modified the oxidation kinetics, the effects of ion dose on oxidation kinetics are shown to be more complex. There is a threshold dose of Ar + ions above which the surface activity becomes significantly reduced; this is ascribed to cluster formation blocking the surface diffusion pathway in the near-surface region. The oxidation kinetics of aluminium also have been studied in a range of temperature from room temperature up to 573 K. As the temperature increases, the oxidation rate of aluminium decreases due to a decrease in the sticking probability of water molecules on the aluminium surfaces. The observed temperature dependence of the oxidation kinetics is likely to be due to a precursor mechanism of water desorption.

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“…known to form very easily and fast [20] at the surface of Al-containing alloys. A crystalline form of Al 2 O 3 was detected at the back of CIAS films by Dwyer et al [12], but was not detected here.…”

Section: Impact Of the Maximum Selenisation Temperaturementioning

confidence: 99%

Crystallographic properties and elemental migration in two-stage prepared CuIn1−Al Se2 thin films for photovoltaic applications

Aninat

Zoppi

Tempez

et al. 2013

Journal of Alloys and Compounds

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Pressure effects on aluminium oxidation kinetics using X-ray photoelectron spectroscopy and parallel factor analysis

Cited by 24 publications

References 34 publications

Detachment of alumina films from aluminium by 100 keV H⁺ ions

Detachment of alumina films from aluminium by 100 keV H⁺ ions

Effects of temperature and Ar⁺ ion bombardment on the initial oxidation stages of polycrystalline aluminium with water vapour

Crystallographic properties and elemental migration in two-stage prepared CuIn1−Al Se2 thin films for photovoltaic applications

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Pressure effects on aluminium oxidation kinetics using X-ray photoelectron spectroscopy and parallel factor analysis

Cited by 24 publications

References 34 publications

Detachment of alumina films from aluminium by 100 keV H+ ions

Detachment of alumina films from aluminium by 100 keV H+ ions

Effects of temperature and Ar+ ion bombardment on the initial oxidation stages of polycrystalline aluminium with water vapour

Crystallographic properties and elemental migration in two-stage prepared CuIn1−Al Se2 thin films for photovoltaic applications

Contact Info

Product

Resources

About

Detachment of alumina films from aluminium by 100 keV H⁺ ions

Detachment of alumina films from aluminium by 100 keV H⁺ ions

Effects of temperature and Ar⁺ ion bombardment on the initial oxidation stages of polycrystalline aluminium with water vapour