2020
DOI: 10.1039/d0nr04325g
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Pressure-driven switching of magnetism in layered CrCl3

Abstract: Pressure-induced switching of magnetism from FM to AFM phase has been observed in layered CrCl3. Concurrently, pressure-induced isostructural transition accompanied with an unusual semiconductor-to-semiconductor transition has been reported.

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Cited by 21 publications
(31 citation statements)
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“…To our knowledge, only one highpressure investigation on the structural, magnetic, and electronic properties of CrCl 3 has been performed by Ahmad et al (2020) up to 40.9 GPa in a diamond anvil cell (DAC) under different hydrostatic environments by virtue of synchrotron X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectroscopy measurements, and first-principles theoretical calculations. 17 Their synchrotron XRD and Raman scattering results for CrCl 3 revealed an isostructural phase transition (IPT) at 11.0 GPa based on the discontinuities in volume and axial ratios, the mergence of M2 and M3 Raman peaks, the inflection points in the Raman shift, spacings in the Raman shift, and Raman full width at half-maximum (fwhm). Further, the photoluminescence spectroscopy and first-principles theoretical calculations results confirmed that the IPT belongs to a semiconductor-to-semiconductor phase transition, which is accompanied by a magnetic transformation from the ferromagnetic to antiferromagnetic phases.…”
Section: Introductionmentioning
confidence: 99%
“…To our knowledge, only one highpressure investigation on the structural, magnetic, and electronic properties of CrCl 3 has been performed by Ahmad et al (2020) up to 40.9 GPa in a diamond anvil cell (DAC) under different hydrostatic environments by virtue of synchrotron X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectroscopy measurements, and first-principles theoretical calculations. 17 Their synchrotron XRD and Raman scattering results for CrCl 3 revealed an isostructural phase transition (IPT) at 11.0 GPa based on the discontinuities in volume and axial ratios, the mergence of M2 and M3 Raman peaks, the inflection points in the Raman shift, spacings in the Raman shift, and Raman full width at half-maximum (fwhm). Further, the photoluminescence spectroscopy and first-principles theoretical calculations results confirmed that the IPT belongs to a semiconductor-to-semiconductor phase transition, which is accompanied by a magnetic transformation from the ferromagnetic to antiferromagnetic phases.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, both the total spectral tuning range, 185 nm, and the linear pressure coefficients at stage-II and III, ca . 40 nm GPa ā€“1 , are the highest among two-dimensional semiconductors reported so far (Figure d). ,,āˆ’ …”
mentioning
confidence: 77%
“…(d) The light emission spectral tuning range Ī”Ī» for various 2D layered semiconductors engineered by pressure; InSe exhibits a record-wide spectral tuning range of 185 nm. Ī”Ī» for each report are as follows: (PEA) 2 PbI 4 , 1L MoS 2 , , 1L MoSe 2 , 1L WSe 2 , , 2L WSe 2 , and CrI 3 …”
mentioning
confidence: 99%
“…We hypothesize that this dramatic change in magnetic behavior, which can be thought of as arising from a compression along the chain-axis, could result in novel piezomagnetic or magnetostrictive properties under high pressure similar to what has been observed in layered CrCl3 and CrI3. 64,67,68 Fig. 3 Experimental Ļ‡T curves (Ļ‡ being magnetic susceptibility per mol Cr) measured from 1.8 K to 300 K under external magnetic field of 1000 Oe, with corresponding fit to the BF model given by equation 1 (red).…”
Section: š‘˜ š‘‡ 2š½š‘† š‘†mentioning
confidence: 99%