Pressure-dependent operation in poly(3-alkylthiophene) field-effect transistors and Schottky diodes

Pressure Modulation of Backbone Conformation and Intermolecular Distance of Conjugated Polymers Toward Understanding the Dynamism of π-Figuration of their Conjugated System

“…It should, however, be mentioned that strengthening the intermolecular interaction (i.e., shortening the π-stacking and interlamellar distances) can actually increase the conductivity or charge-carrier mobility on the long spatial scale, as evaluated by direct-current measurements like FET , and four-probe electrodes. , For instance, FET characterization of regioregular P3HT under pressure revealed a linear increase in mobility and its three-fold enhancement at 1 GPa . The connectivity of crystalline domains, rather than the shortened intermolecular distance within the domain, might be responsible for the linear enhancement in long-range mobility by virtue of the compressed amorphous phase.…”

“…Therefore, the DFT calculation supports our claim that the increase in the HP-TRMC maxima of P3HT is due to the backbone planarization and resultant increase in intramolecular hole mobility. It should, however, be mentioned that strengthening the intermolecular interaction (i.e., shortening the π-stacking and interlamellar distances) can actually increase the conductivity or charge-carrier mobility on the long spatial scale, as evaluated by direct-current measurements like FET 46,48 and four-probe electrodes. 45,47 For instance, FET characterization of regioregular P3HT under pressure revealed a linear increase in mobility and its three-fold enhancement at 1 GPa.…”

“…Despite vigorous research on the optical spectroscopy of conjugated materials under pressure, electrical measurements for these materials have been limited. ,− The latest study of poly­(3-hexylthiophene) (P3HT) showed that FET mobility is improved by a factor of 3 at 1 GPa owing to enhanced intermolecular interaction . Molecular crystals such as pentacene polycrystalline films and rubrene single crystals , have displayed a similar trend in the low-pressure region (<0.6 GPa).…”

Metal–insulator transitions in pressed pellets of BF−4doped poly(3-methylthiophene)

“…Any substantial or systematic reproduction, redistribution, reselling, loan, sub-licensing, systematic supply, or distribution in any form to anyone is expressly forbidden. Ahlskog, Paloheimo, Stubb and Assadi, 1994;Baughman, 1996) but also for the very exciting fundamental properties observed in these quasi-one-dimensional systems (Heeger, Kivelson, Schrieffer and Su, 1988). In recent works (Pawlicka, Pereira, Nascimento, Faria, Bulhdes and Walmsley, 1994;Pereira, Bulhdes, Pawlicka, Nascimento, Faria and Walmsley, 1994) ESR has been used to extract electric and magnetic data in conducting polymers.…”

Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states

“…They observed an increase in SBH with increasing pressure and attributed this to a combination of band structure and piezoelectric effects. Also, Ahlskog et al [19] prepared a poly(3-alkylthiophene) field effect transistor and a Schottky diode to observe the hydrostatic pressure effect. Gworek et al [20] studied the pressure dependence of the Cu, Ag, and Fe/n-GaAs (110) on SBH.…”