Pressure dependence of the hole mobility in GaAs, InP and (GaIn)(AsP)/InP

Energy-Band Structure: Electron and Hole Effective Masses

“…16 (b) shows the calculated dispersion curves E-k|| for a 42-A wide isolated AlAs/GaAs/ALAs quantum well in zero magnetic field and electric fields given approximately by the applied voltages at which the corresponding resonances are seen in I-V characteristics. It is found that there is a qualitative similarity between the experimental V.-B and calculated E-k|| for the anisotropy of the LH1 subband: for large k|| the [110] direction corresponds to a larger hole confinement energy than the [100] direction. For the HH2 and LH2 subbands, the agreement is less good.…”

“…90 We summarize in Table 9.6 functional expressions for the heavy-and light-hole masses, m^ and m LH , as expressed by the Luttinger parameters, along the [001], [110], and [111] directions in the diamond-and zinc-blende-type crystals. not only for the interpretation of the optical and transport measurements in bulk semiconductors, but also for the prediction of the electronic properties of quantum-well structures (Section 9.2.4).…”

“…We show in Table 9.12 functional expressions for the in-plane and perpendicular masses in quantum wells grown along the three principal directions, [001], [110], and [111]. These expressions are highly simplified so that they may not describe the real quantum-well case exactly.…”

“…The voltage positions V p of tunneling peaks varied with magnetic field, as shown in Fig. 9.16 (a) for the magnetic field along the [010] and [110] crystallogTaphic axes. The V p -B curve of each hole resonance closely resembles that of the energy-wavevector dispersion curve E-kj j of the corresponding confined hole subband in the quantum well, where k|| is the in-plane wavevector.…”

“…6 Functional Expressions for the Heavy-and Light-Hole Masses, m^ and m^, Along the [001],[110], and[111] Directions. The ^s Are the Luttinger Parameters.…”