Pressure Dependence of the Band Gap of 4H-SiC

Zeman, Jan; Engelbrecht, F.; Wellenhofer, G.; Peppermüller, C.; Helbig, R.; Martinez, G.; Rößler, U.

doi:10.1002/(sici)1521-3951(199901)211:1<69::aid-pssb69>3.0.co;2-h

Cited by 6 publications

(2 citation statements)

References 8 publications

(12 reference statements)

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“…High-pressure and low-temperature experiments were conducted on nitrogen-doped 6H-and 4H-SiC where positive pressure dependence was observed. The pressure dependence of the indirect gap in these cases was found to be 2.0 MeV/GPa for N doped 6H-SiC at 29 K and pressures up to 5 GPa [80], and 2.7 MeV/GPa for N doped 4H-SiC at 7 K and pressures up to 5 GPa [81].…”

Section: High-pressure Absorptionmentioning

confidence: 93%

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

Daviau

Lee

2018

Crystals

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Abstract:The high-pressure behavior of silicon carbide (SiC), a hard, semi-conducting material commonly known for its many polytypic structures and refractory nature, has increasingly become the subject of current research. Through work done both experimentally and computationally, many interesting aspects of high-pressure SiC have been measured and explored. Considerable work has been done to measure the effect of pressure on the vibrational and material properties of SiC. Additionally, the transition from the low-pressure zinc-blende B3 structure to the high-pressure rocksalt B1 structure has been measured by several groups in both the diamond-anvil cell and shock communities and predicted in numerous computational studies. Finally, high-temperature studies have explored the thermal equation of state and thermal expansion of SiC, as well as the high-pressure and high-temperature melting behavior. From high-pressure phase transitions, phonon behavior, and melting characteristics, our increased knowledge of SiC is improving our understanding of its industrial uses, as well as opening up its application to other fields such as the Earth sciences.

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Section: High-pressure Absorptionmentioning

confidence: 93%

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

Daviau

Lee

2018

Crystals

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“…It is unclear whether equation (1) would be applicable or not to wide band gap semiconductors at P100 GPa. From the data reported in literatures [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50], previous studies are focused on the pressure coefficients (dE g /dP) at ambient or moderate pressures, at which the values of c p can be either positive or negative, with an order of magnitude of 10 −2 -10 −1 eV GPa −1 for most systems. By contrast, our studies based on first-principles calculations find that, the band gaps of the two high-pressure phases of TiO 2 are surprisingly robust to compression.…”

Section: Introductionmentioning

confidence: 99%

Unexpected robustness of the band gaps of TiO₂under high pressures

Yang

2017

J. Phys. Commun.

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Titanium dioxide (TiO 2 ) is a wide band gap semiconducting material which is promising for photocatalysis. Here we present first-principles calculations to study the pressure dependence of structural and electronic properties of two TiO 2 phases: the cotunnite-type and the Fe 2 P-type structure. The band gaps are calculated using density functional theory with the generalized gradient approximation, as well as the many-body perturbation theory with the GW approximation. The band gaps of both phases are found to be unexpectedly robust across a broad range pressures. The corresponding pressure coefficients are significantly smaller than that of diamond and silicon carbide, whose pressure coefficient is the smallest value ever measured by experiment. The robustness originates from the synchronous change of valence band maximum and conduction band minimum with nearly identical rates of changes. A step-like jump of band gaps around the phase transition pressure point is expected and understood in light of the difference in crystal structures.

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silicon carbide (SiC), optical properties of impurities and other defects: shallow donors

Landolt-Börnstein - Group III Condensed Matter

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Pressure Dependence of the Band Gap of 4H-SiC

Cited by 6 publications

References 8 publications

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

Unexpected robustness of the band gaps of TiO₂under high pressures

silicon carbide (SiC), optical properties of impurities and other defects: shallow donors

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Pressure Dependence of the Band Gap of 4H-SiC

Cited by 6 publications

References 8 publications

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

Unexpected robustness of the band gaps of TiO2under high pressures

silicon carbide (SiC), optical properties of impurities and other defects: shallow donors

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Product

Resources

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Unexpected robustness of the band gaps of TiO₂under high pressures