Both the in-plane and the out-of-plane resistivities (ρ ab and ρc) are measured in high-quality La2−xSrxCuO4 single crystals in the lightly-to moderately-doped region, 0.01 ≤ x ≤ 0.10, and the resistivity anisotropy is determined. In all the samples studied, the anisotropy ratio ρc/ρ ab quickly increases with decreasing temperature, although in non-superconducting samples the strong localization effect causes ρc/ρ ab to decrease at low temperatures. Most notably, it is found that ρc/ρ ab at moderate temperatures (100 − 300 K) is almost completely independent of doping in the non-superconducting regime (0.01 ≤ x ≤ 0.05); this indicates that the same charge confinement mechanism that renormalizes the c-axis hopping rate is at work down to x=0.01. It is discussed that this striking x-independence of ρc/ρ ab is consistent with the idea that holes form a self-organized network of hole-rich regions, which also explains the unusually metallic in-plane transport of the holes in the lightly-doped region. Furthermore, the data for x > 0.05 suggest that the emergence of the superconductivity is related to an increase in the c-axis coupling.